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| 臺大學術典藏 |
2020-06-16T06:32:15Z |
Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers
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Hsu, S.-M.;Li, Y.-S.;Tu, M.-S.;He, J.-C.;Chiu, I.-C.;Chen, P.-G.;Lee, M.-H.;Chen, J.-Z.;Cheng, I.-C.; Hsu, S.-M.; Li, Y.-S.; Tu, M.-S.; He, J.-C.; Chiu, I.-C.; Chen, P.-G.; Lee, M.-H.; Chen, J.-Z.; Cheng, I.-C.; I-CHUN CHENG |
| 臺大學術典藏 |
2020-06-16T06:32:15Z |
Enhancement of gate-bias and current stress stability of P-type SnO thin-film transistors with SiNx/HfO2 passivation layers
|
Hsu, S.-M.;Li, Y.-S.;Tu, M.-S.;He, J.-C.;Chiu, I.-C.;Chen, P.-G.;Lee, M.-H.;Chen, J.-Z.;Cheng, I.-C.; Hsu, S.-M.; Li, Y.-S.; Tu, M.-S.; He, J.-C.; Chiu, I.-C.; Chen, P.-G.; Lee, M.-H.; Chen, J.-Z.; Cheng, I.-C.; I-CHUN CHENG |
Showing items 1-2 of 2 (1 Page(s) Totally)
1
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