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"tun c j"的相关文件
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| 臺大學術典藏 |
2018-09-10T07:35:51Z |
The bandwidth-efficiency product enhancement of GaN based photodiodes by launching a low-temperature-grown recombination center in photo-absorption region
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Guol, S.-H.;Lee, M.-L.;Lin, C.S.;Sheu, J.-K.;Wu, Y.-S.;Sun, C.-K.;Kuo, C.-H.;Tun, C.-J.;Shi, J.-W.; Guol, S.-H.; Lee, M.-L.; Lin, C.S.; Sheu, J.-K.; Wu, Y.-S.; Sun, C.-K.; Kuo, C.-H.; Tun, C.-J.; Shi, J.-W.; CHI-KUANG SUN |
| 國立交通大學 |
2014-12-08T15:21:11Z |
Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
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Chen, C. W.; Hung, S. C.; Lee, C. H.; Tun, C. J.; Kuo, C. H.; Yang, M. D.; Yeh, C. W.; Wu, C. H.; Chi, G. C. |
| 淡江大學 |
2010-02 |
Fabrication of high-power InGaN-based light-emitting diode chips on pyramidally patterned sapphire substrate
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許世杰; Chen, Y. J.; Kuo, C. H.; Tun, C. J.; Chen, Y. J. |
| 國立成功大學 |
2007 |
Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering
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�Sheu, �Jinn-Kong; Shu, K. W.; Lee, M. L.; Tun, C. J.; Chi, G. C. |
| 國立成功大學 |
2005-09-15 |
Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors
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Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, Gou-Chung; Sheu, Jinn-Kong; Lai, Wei-Chih; Lee, Min-Lum; Ren, F.; Pearton, S. J. |
| 國立成功大學 |
2005 |
Comparison of Low Temperature GaN/SiO2/Si3N4 as gate insulators on AlGaN/GaN Heterostructure Field Effect Transistors
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Kao, C. J.; Chen, M. C.; Tun, C. J.; Chi, G. C.; �Sheu, �Jinn-Kong; Lai, W. C.; �Lee,� M.� L.; Ren, F.; Pearton, S. J. |
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