|
|
???tair.name??? >
???browser.page.title.author???
|
"tzeng wen hsien"???jsp.browse.items-by-author.description???
Showing items 1-19 of 19 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:43:58Z |
Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立交通大學 |
2019-04-02T05:59:00Z |
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立交通大學 |
2014-12-08T15:33:46Z |
Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
|
Zhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:48:11Z |
Effect of ultraviolet light exposure on a HfO(x) RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立交通大學 |
2019-04-02T06:00:17Z |
Effect of ultraviolet light exposure on a HfOx RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立交通大學 |
2014-12-08T15:03:13Z |
Higher Drive Current for SiGe Nanowires
|
Chang, Kow-Ming; Kuo, Jiun-Ming; Wu, Heng-Hsin; Tzeng, Wen-Hsien; Wu, Tzu-liu; Chao, Wen-Chan |
| 國立交通大學 |
2014-12-08T15:21:15Z |
Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Huang, Jiun-Jie; Lee, Yun-Ju; Yeh, Ping-Hung; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:38:20Z |
Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
|
Chang, Kow-Ming; Tzeng, Wen-Hsien; Liu, Kou-Chen; Chan, Yi-Chun; Kuo, Chun-Chih |
| 國立交通大學 |
2014-12-08T15:22:56Z |
Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O-2 Plasma Post-treatment
|
Lai, Chiung-Hui; Chang, Te-Shun; Tzeng, Wen-Hsien; Chang, Kow-Ming |
| 國立交通大學 |
2014-12-08T15:22:23Z |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 國立臺灣大學 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn |
| 臺大學術典藏 |
2012 |
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
|
Tzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; Tzeng, Wen-Hsien; Tsai, Feng-Yu et al. |
| 國立交通大學 |
2014-12-08T15:05:35Z |
The effect of plasma deposition on the electrical characteristics of Pt/HfO(x)/TiN RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung |
| 國立交通大學 |
2019-04-02T05:59:56Z |
The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung |
| 國立交通大學 |
2014-12-08T15:03:14Z |
The Ge Enhance the Sensitivity for Bio-Sensor
|
Chang, Kow-Ming; Kuo, Jiun-Ming; Chao, Wen-Chan; Liang, Chia-Jung; Wu, Heng-Hsin; Tzeng, Wen-Hsien; Wu, Tzu-liu |
| 國立交通大學 |
2014-12-08T15:13:49Z |
The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen |
| 國立交通大學 |
2019-04-02T05:58:00Z |
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen |
| 國立交通大學 |
2017-04-21T06:49:52Z |
Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics
|
Liu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Cheng, Chun-Wen |
| 國立交通大學 |
2014-12-12T01:24:37Z |
電阻式記憶體之特性研究及電性探討
|
曾文賢; Tzeng, Wen-Hsien; 張國明; 劉國辰; Chang, Kow-Ming; Liu, Kou-Chen |
Showing items 1-19 of 19 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
