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Showing items 11-27 of 27 (2 Page(s) Totally)
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| 國立成功大學 |
2008-03 |
Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate
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Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Chen, Shiue-Lung; Lee, Wei-Chi; Hsu, Hong-Kuei; Chou, Jui-Chiang; Wu, Chung-Han |
| 國立成功大學 |
2008-01-14 |
A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes
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Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Kuan, Hon |
| 國立成功大學 |
2007-03 |
Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques
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Chen, Shiue-Lung; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Tron-Min; Lee, Wei-Chi; Liou, Bor-Wen |
| 國立成功大學 |
2007-01-22 |
Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
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Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Shiue-Lung; Tsai, Wei-Chih; Lee, Wei-Chi; Tsai, Ching-Chung |
| 國立成功大學 |
2006-10 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-07-10 |
高效率氮化鎵系列發光二極體之設計與製造
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汪楷茗; Uang, Kai-Ming |
| 國立成功大學 |
2006-07-10 |
高效率氮化鎵系列發光二極體之設計與製造
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汪楷茗; Uang, Kai-Ming |
| 國立成功大學 |
2006-06 |
A vertical-structured Ni/GaN Schottky barrier diode using electroplating nickel substrate
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Wang, Shui-Jinn; Chen, Tron-Min; Uang, Kai-Ming; Chen, Shiue-Lung; Hsla, Tung-Sheng; Chang, Shu-Cheng; Ku, Hon-Yi; Liou, Bor-Wen |
| 國立成功大學 |
2006-05 |
The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes
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Wang, Shui-Jinn; Chen, Shiue-Lung; Uang, Kai-Ming; Lee, Wei-Chi; Chen, Tron-Min; Chen, Chao-Hsuing; Liou, Bor-Wen |
| 國立成功大學 |
2006-04 |
Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Yang, Yu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-01-14 |
The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films
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Chen, Chao-Hsuing; Wang, Shui-Jinn; Ko, Rong-Ming; Kuo, Yi-Cheng; Uang, Kai-Ming; Chen, Tron-Min; Liou, Bor-Wen; Tsai, Hao-Yi |
| 國立成功大學 |
2005-12 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
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Chang, Shu-Cheng; Wang, Shui-Jinn; Uang, Kai-Ming; Liou, Bor-Wen |
| 國立成功大學 |
2005-04 |
High-power GaN-based light-emitting diodes with transparent indium zinc oxide films
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Wu, Chin-Kun; Chang, Shu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2005-03 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
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Chang, Shu-Cheng; Wang, Shui-Jinn; Uang, Kai-Ming; Liou, Bor-Wen |
| 國立成功大學 |
2005-02 |
On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires from WCx films
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Wang, Shui-Jinn; Chen, Chao-Hsuing; Chang, Shu-Cheng; Wong, Chin-Hong; Uang, Kai-Ming; Chen, Tron-Min; Ko, Rong-Ming; Liou, Bor-Wien |
| 國立成功大學 |
2005 |
High power silicon Schottky barrier diodes with different edge termination structures
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Liou, Bor-Wen; Chen, Tron-Min; Chen, Chih-Wei; Uang, Kai-Ming; Wang, Shui-Jinn |
| 國立成功大學 |
2004-09-20 |
Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films
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Wang, Shui-Jinn; Chen, Chao-Hsuing; Chang, Shu-Cheng; Uang, Kai-Ming; Juan, Chuan-Ping; Cheng, Huang-Chung |
Showing items 11-27 of 27 (2 Page(s) Totally)
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