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Institution Date Title Author
元智大學 Sep-21 E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V-th Stability by Field Plate Engineering 李清庭; Wu, Jui-Sheng; Lee, Chih-Chieh; Wu, Chia-Hsun; Kao, Min-Lu; Weng, You-Chen; Yang, Chih-Yi; Luc, Quang Ho; Ueda, Daisuke; Chang, Edward Yi
元智大學 Nov-21 Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD 李清庭; Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Dee, Chang Fu; Ueda, Daisuke
國立交通大學 2020-10-05T02:02:04Z Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition Zheng, Xia-Xi; Lin, Chun-Hsiung; Ueda, Daisuke; Chang, Edward-Yi

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