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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 元智大學 |
Sep-21 |
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V-th Stability by Field Plate Engineering
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李清庭; Wu, Jui-Sheng; Lee, Chih-Chieh; Wu, Chia-Hsun; Kao, Min-Lu; Weng, You-Chen; Yang, Chih-Yi; Luc, Quang Ho; Ueda, Daisuke; Chang, Edward Yi |
| 元智大學 |
Nov-21 |
Selective area epitaxy of high quality Wurtzite-InAs heterostructure on InGaAs nanopillars at indium-rich region using MOCVD
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李清庭; Anandan, Deepak; Yu, Hung Wei; Chang, Edward Yi; Singh, Sankalp Kumar; Nagarajan, Venkatesan; Dee, Chang Fu; Ueda, Daisuke |
| 國立交通大學 |
2020-10-05T02:02:04Z |
Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition
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Zheng, Xia-Xi; Lin, Chun-Hsiung; Ueda, Daisuke; Chang, Edward-Yi |
Showing items 1-3 of 3 (1 Page(s) Totally)
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