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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:18:35Z |
Carrier localization effect in polarized InGaN multiple quantum wells
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Kazlauskas, K.; Tamulaitis, G.; Mickevi?ius, J.; Jur?enas, S.; Kuril?ik, G.; Miasojedovas, S.; Springis, M.; Tale, I.; Cheng, Y.-C.; Wang, H.-C.; Huang, C.-F.; Yang, C.C.; ?ukauskas, A.; CHIH-CHUNG YANG et al. |
| 臺大學術典藏 |
2018-09-10T05:18:32Z |
Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
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Kazlauskas, K.; Tamulatis, G.; Jur?enas, S.; ?ukauskas, A.; Springis, M.; Cheng, Y.-C.; Wang, H.-C.; Huang, C.-F.; Yang, C.C.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T05:18:29Z |
Stimulated emission in InGaN/GaN multiple quantum wells with different indium content
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Miasojedovas, S.; Jur?enas, S.; Kuril?ik, G.; ?ukauskas, A.; Springis, M.; Tale, I.; Yang, C.C.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T04:09:35Z |
Luminescence of localised excitons in InGaN/GaN multiple quantum wells
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Miasojedovas, S.; Jur?enas, S.; Kuril?ik, G.; ?ukauskas, A.; Feng, S.-W.; Yang, C.C.; Chuang, H.-W.; Kuo, C.-T.; Tsang, J.-S.; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2003 |
Quantum-well thickness dependence of stimulated emission in InGaN/GaN structures
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Jur??nas, S.; Miasojedovas, S.; Kuril?ik, G.; ?ukauskas, A.; Feng, Shih-Wei; Cheng, Yung-Chen; Yang, C.C.; Kuo, Cheng-Ta; Tsang, Jian-Shihn; CHIH-CHUNG YANG |
| 國立臺灣大學 |
2002 |
Luminescence of Localised Excitons in InGaN/GaN Multiple Quantum Wells
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Miasojedovas, S.; Jurnas, S.; Kurilik, G.; ukauskas, A.; Feng, Shih-Wei; Yang, C.C.; Chuang, Hui-Wen; Kuo, Cheng-Ta; Tsang, Jian-Shihn |
Showing items 1-6 of 6 (1 Page(s) Totally)
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