臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

关于TAIR
	计画说明

浏览
	典藏机构
	作者
	题名
	日期
	统计图表
	机构即时统计
	学术趋势

消息
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

著作权
	出版社及期刊政策查询
	TAIR著作权会议记录

相关连结
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"v p h hu"的相关文件

回到依作者浏览
依题名排序	依日期排序

显示项目 31-80 / 81 (共2页)
1 2 > >>
每页显示[10|25|50]项目

机构	日期	题名	作者
臺大學術典藏	2020-10-07T01:23:15Z	Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling	胡璧合; VITA PI-HO HU; C.-T. Chuang; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su
臺大學術典藏	2020-10-07T01:23:15Z	Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits	C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:15Z	Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits	C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:15Z	Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits	C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏	2020-10-07T01:23:11Z	Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs	V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:11Z	Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs	V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:11Z	Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs	V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2020	Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020	Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020	Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2018	Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs	V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏	2018	Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs	V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏	2017	Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier	VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2017	Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier	VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist	M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist	M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist	M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET	C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang
臺大學術典藏	2015	Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET	C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang
臺大學術典藏	2015	Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET	C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang
臺大學術典藏	2014	Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2014	Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2014	Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2013	Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; P. Su; 胡璧合; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang
臺大學術典藏	2013	Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; P. Su; 胡璧合; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang
臺大學術典藏	2013	Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; P. Su; 胡璧合; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang
臺大學術典藏	2013	Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells	VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2013	Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells	VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2013	Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells	VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2012	Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs	C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2012	Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs	C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2011	FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; P. Su; M.-L. Fan; C.-Y. Hsieh; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;C.-Y. Hsieh;P. Su;C.-T. Chuang
臺大學術典藏	2011	FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; P. Su; M.-L. Fan; C.-Y. Hsieh; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;C.-Y. Hsieh;P. Su;C.-T. Chuang
臺大學術典藏	2011	FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics	C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; P. Su; M.-L. Fan; C.-Y. Hsieh; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;C.-Y. Hsieh;P. Su;C.-T. Chuang
臺大學術典藏	2011	Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET	VITA PI-HO HU; 胡璧合; V. P.-H. Hu;Y.-S. Wu;P. Su; V. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; P. Su
臺大學術典藏	2011	Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET	VITA PI-HO HU; 胡璧合; V. P.-H. Hu;Y.-S. Wu;P. Su; V. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; P. Su

显示项目 31-80 / 81 (共2页)
1 2 > >>
每页显示[10|25|50]项目

	English \| 正體中文 \| 简体中文 \| 总笔数 :0
	造访人次 : 50685467 在线人数 : 255 教育部委托研究计画计画执行:国立台湾大学图书馆