臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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显示项目 36-45 / 81 (共9页)
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机构	日期	题名	作者
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu

显示项目 36-45 / 81 (共9页)
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