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"vakhshoori d"的相關文件
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| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells
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Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:13Z |
Insulator passivation of In 0.2 Ga 0.8 As-GaAs surface quantum wells
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Passlack, M; Hong, M; Harris, TD; Mannaerts, JP; Vakhshoori, D; Schnoes, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
RECORD LOW-RESISTANCE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING HYBRID MIRROR APPROACH
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contacts
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Hong, M;Vakhshoori, D;Mannaerts, JP;Hsieh, Y-F; Hong, M; Vakhshoori, D; Mannaerts, JP; Hsieh, Y-F; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:11Z |
Low resistivity vertical-cavity surface emitting lasers grown by molecular-beam epitaxy using sinusoidal-composition grading in mirrors and insitu nonalloyed ohmic contacts
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Hong, M;Vakhshoori, D;Mannaerts, JP;Hsieh, Y-F; Hong, M; Vakhshoori, D; Mannaerts, JP; Hsieh, Y-F; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In situ nonalloyed ohmic contacts to p-GaAs
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Hong, M;Vakhshoori, D;Mannaerts, JP;Thiel, FA;Wynn, JD; Hong, M; Vakhshoori, D; Mannaerts, JP; Thiel, FA; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
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Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
Buried heterostructure laser diodes fabricated using in situ processing
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Hong, M;Vakhshoori, D;Grober, LH;Mannaerts, JP;Asom, MT;Wynn, JD;Thiel, FA;Freund, RS; Hong, M; Vakhshoori, D; Grober, LH; Mannaerts, JP; Asom, MT; Wynn, JD; Thiel, FA; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:57Z |
In-situ process for AlGaAs compound semiconductor: Materials science and device fabrication
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Hong, M;Choquette, KD;Mannaerts, JP;Grober, LH;Freund, RS;Vakhshoori, D;Chu, SNG;Luftman, HS;Wetzel, RC; Hong, M; Choquette, KD; Mannaerts, JP; Grober, LH; Freund, RS; Vakhshoori, D; Chu, SNG; Luftman, HS; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
40-mW focused light spot from zone laser and parameters affecting its performance
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Vakhshoori, D;Asom, M;Hong, M;Leibenguth, RE;Wynn, JD;Mannaerts, JP;Kojima, K; Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
40-mW focused light spot from zone laser and parameters affecting its performance
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Vakhshoori, D;Asom, M;Hong, M;Leibenguth, RE;Wynn, JD;Mannaerts, JP;Kojima, K; Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Zone lasers
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Vakhshoori, D;Hong, M;Asom, M;Leibenguth, RE;Mannaerts, JP;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:56Z |
Zone lasers
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Vakhshoori, D;Hong, M;Asom, M;Leibenguth, RE;Mannaerts, JP;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Leibenguth, RE; Mannaerts, JP; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
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Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:51:55Z |
Low-Resistivity Non-Alloyed Ohmic Contacts to p-and n-Gaas Using In-Situ Integrated Process
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Hong, M;Vakhshoori, D;Mannaerts, JP;Kwo, J; Hong, M; Vakhshoori, D; Mannaerts, JP; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
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Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
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Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980nm Zone Lasers
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980nm Zone Lasers
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980 nm zone lasers [InGaAs quantum wells]
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K;Leibenguth, RE;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; Leibenguth, RE; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980 nm zone lasers [InGaAs quantum wells]
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K;Leibenguth, RE;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; Leibenguth, RE; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Blue-green surface-emitting second-harmonic generators on (111) B GaAs
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MINGHWEI HONG; Cho, AY; Chu, GNS; Zydzik, GJ; Sivco, DL; Hong, M; Fischer, RJ; Vakhshoori, D |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
Blue/green surface-emitting second-harmonic generators on< 111> GaAs substrate
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Vakhshoori, D; Fischer, RJ; Hong, M; Chu, GS; Zydzik, GJ; Sivco, DL; Cho, AY; MINGHWEI HONG |
顯示項目 1-28 / 28 (共1頁)
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