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"venkataraman v"
Showing items 1-5 of 5 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T06:31:23Z |
Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:51Z |
Electron cyclotron resonance in strained Si and Si0.94Ge0.06 channels on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition
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Liu, C.W.;Venkataraman, V.; Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:33:15Z |
Alloy scattering limited transport of two-dimensional carriers in strained Si1-xGex quantum wells
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Venkataraman, V.;Liu, C.W.;Sturm, J.C.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
| 國立臺灣大學 |
1997 |
Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Venkataraman, V. |
| 臺大學術典藏 |
1996 |
High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques
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Madhavi, S.;Venkataraman, V.;Liu, C.W.;Sturm, J.C.; Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU |
Showing items 1-5 of 5 (1 Page(s) Totally)
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