| 臺大學術典藏 |
2021-05-05T03:31:09Z |
Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS2FETs for SoC Scaling
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Hu, V.P.-H.; Su, C.-W.; Lee, Y.-W.; Ho, T.-Y.; Cheng, C.-C.; Chen, T.-C.; Hung, T.Y.-T.; Li, J.-F.; Chen, Y.-G.; Li, L.-J.; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:20Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation
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Y.-S. Wu; V. P.-H. Hu; V. P.-H. Hu;Y.-S. Wu;M.-L. Fan;P. Su;C.-T. Chuang; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:20Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation
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Y.-S. Wu; V. P.-H. Hu; V. P.-H. Hu;Y.-S. Wu;M.-L. Fan;P. Su;C.-T. Chuang; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:19Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
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P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:19Z |
Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity
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P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
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C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs
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C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
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VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
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Y.-S. Wu; C.-H. Yu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:18Z |
Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs
|
Y.-S. Wu; C.-H. Yu; V. P.-H. Hu; P. Su; VITA PI-HO HU; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits
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VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
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胡璧合; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; P. Su; C.-T. Chuang; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:17Z |
Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications
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胡璧合; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; VITA PI-HO HU; P. Su; C.-T. Chuang; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
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VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation
|
VITA PI-HO HU; C.-T. Chuang; P. Su; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET
|
M.-L. Fan; VITA PI-HO HU; C.-T. Chuang; P. Su; Y.-N. Chen; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Design and Analysis of Robust Tunneling FET SRAM
|
C.-T. Chuang; V. P.-H. Hu; P. Su; Y.-N. Chen; M.-L. Fan; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;P. Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:16Z |
Design and Analysis of Robust Tunneling FET SRAM
|
C.-T. Chuang; V. P.-H. Hu; P. Su; Y.-N. Chen; M.-L. Fan; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;P. Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU; 胡璧合; VITA PI-HO HU |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; Pin Su; C.-T. Chuang; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices
|
VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; Pin Su; C.-T. Chuang; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su |
| 臺大學術典藏 |
2020-10-07T01:23:15Z |
Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling
|
胡璧合; VITA PI-HO HU; C.-T. Chuang; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su |
