臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
臺大學術典藏	2020-10-07T01:23:15Z	Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits	C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:15Z	Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits	C.-T. Chuang; Y.-N. Chen; P. Su; V. P.-H. Hu; S.-Y. Yang; M.-L. Fan;S.-Y. Yang;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU; M.-L. Fan; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET	VITA PI-HO HU; 胡璧合; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-W. Hsu; VITA PI-HO HU; Pin Su; V. P.-H. Hu; C.-W. Hsu; M.-L. Fan; C.-W. Hsu;M.-L. Fan;V. P.-H. Hu;Pin Su
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:14Z	Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits	VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; C.-J. Chen; Y.-N. Chen; Y.-N. Chen;C.-J. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:13Z	Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications	VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; Vita Pi-Ho Hu; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-H. Yu; M.-L. Fan; K.-C. Yu; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏	2020-10-07T01:23:12Z	Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression	VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏	2020-10-07T01:23:11Z	Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs	V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020-10-07T01:23:11Z	Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs	V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2020	Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET)	VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏	2020	Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2020	Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2018	Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs	V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏	2018	Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs	V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏	2017	Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier	VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2017	Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier	VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2017	Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier	VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist	M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist	M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏	2015	Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET	C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang

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