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Showing items 36-63 of 63  (2 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2020-10-07T01:23:12Z Optimization of III-V heterojunction tunnel FET with non-uniform channel thickness for performance enhancement and ambipolar leakage suppression VITA PI-HO HU; 胡璧合; C.-T. Wang; V. P.-H. Hu; VITA PI-HO HU; C.-T. Wang; V. P.-H. Hu
臺大學術典藏 2020-10-07T01:23:11Z Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020-10-07T01:23:11Z Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs V. P.-H. Hu;P.-C. Chiu;Y.-C. Lu; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu; Y.-C. Lu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020 Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏 2020 Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) VITA PI-HO HU; 胡璧合; C. Hu; V. P.-H. Hu;H.-H. Lin;Y.-K. Lin;C. Hu; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin; C. Hu; VITA PI-HO HU; V. P.-H. Hu; H.-H. Lin; Y.-K. Lin
臺大學術典藏 2020 Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2020 Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications M. Gupta;V. P.-H. Hu;VITA PI-HO H; M. Gupta; V. P.-H. Hu; VITA PI-HO HU; M. Gupta; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2018 Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏 2018 Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs V. P.-H. Hu; P.-C. Chiu; 胡璧合; VITA PI-HO HU; VITA PI-HO HU; V. P.-H. Hu; P.-C. Chiu
臺大學術典藏 2017 Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2017 Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2017 Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier VITA PI-HO HU; V. P.-H. Hu; VITA PI-HO HU; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2015 Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏 2015 Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang;; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU
臺大學術典藏 2015 Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang
臺大學術典藏 2015 Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU; C.-W. Hsu; Y.-N. Chen; V. P.-H. Hu; M.-L. Fan; M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;C.-W. Hsu;Pin Su;C.-T. Chuang
臺大學術典藏 2014 Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏 2014 Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits VITA PI-HO HU; 胡璧合; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; VITA PI-HO HU; C.-T. Chuang; Pin Su; V. P.-H. Hu; M.-L. Fan; Y.-N. Chen; Y.-N. Chen;M.-L. Fan;V. P.-H. Hu;Pin Su;C.-T. Chuang
臺大學術典藏 2013 Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; P. Su; 胡璧合; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang
臺大學術典藏 2013 Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; P. Su; 胡璧合; M.-L. Fan; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang
臺大學術典藏 2013 Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2013 Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells VITA PI-HO HU; V. P.-H. Hu;M.-L. Fan;P. Su;C.-T. Chuang; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合
臺大學術典藏 2012 Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2012 Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; VITA PI-HO HU; C.-Y. Hsieh; M.-L. Fan; V. P.-H. Hu; 胡璧合; VITA PI-HO HU
臺大學術典藏 2011 FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; P. Su; M.-L. Fan; C.-Y. Hsieh; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;C.-Y. Hsieh;P. Su;C.-T. Chuang
臺大學術典藏 2011 FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics C.-T. Chuang; VITA PI-HO HU; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合; VITA PI-HO HU; P. Su; M.-L. Fan; C.-Y. Hsieh; V. P.-H. Hu; V. P.-H. Hu;M.-L. Fan;C.-Y. Hsieh;P. Su;C.-T. Chuang
臺大學術典藏 2011 Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET VITA PI-HO HU; 胡璧合; V. P.-H. Hu;Y.-S. Wu;P. Su; V. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; P. Su
臺大學術典藏 2011 Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET VITA PI-HO HU; 胡璧合; V. P.-H. Hu;Y.-S. Wu;P. Su; V. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU; V. P.-H. Hu; Y.-S. Wu; P. Su

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