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Showing items 56-80 of 80  (4 Page(s) Totally)
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Institution Date Title Author
國立中山大學 1994 Magneto-optical study of negative persistent photo effect in InAs/Al0.5Ga0.5Sb quantum wells J.P. Cheng;Ikai Lo;W.C. Mitchel
國立中山大學 1994 A study of magnetic-field-induced semimetal to semiconductor transition in the AlXGa1-XSb/InAs quantum wells Ikai Lo;W.C. Mitchel;J.P. Cheng
國立中山大學 1994 Persistent photocurrent in thin, undoped GaInP/GaAs quantum well S. Elhamri;M. Ahoujja;R.S. Newrock;W.C. Mitchel;Ikai Lo;M. Razeghi;Xiaoguang He
國立中山大學 1994 Spectroscopy evidence for the exitonic phase in InAs/AlxGai-xSb quantum wells J.P. Cheng;J. Kono;B.D. McCombe;Ikai Lo;W.C. Mitchel
國立中山大學 1994 Observation of new Far-IR Transition in InAs/AlGaSb Confined structure J.P. Cheng;J. Kono;B.D. McCombe;Ikai Lo;W.C. Mitchel
國立中山大學 1994 The internal technical reports of Wright Laboratory, Air Force Systems Command, WPAFB, ed. by M.E. Zellmer. Ikai Lo;W.C. Mitchel;D. Boeringer;K.A. Harris;R.W. Yanka;L.M. Mohnkern;A.R. Reisinger;T.H. Myers
國立中山大學 1994 Oscillations in the Cyclotron Resonance of Semimetallic InAs/ AlxGa1-xSb Single Quantum Wells J. Kono;B.D. McCombe;J.P. Cheng;Ikai Lo;W.C. Mitchel
國立中山大學 1993 Magnetic-field-induced free electron and hole recombination in the AIXGa1-XSb/InAs quantum wells Ikai Lo;W.C. Mitchel;J.P. Cheng
國立中山大學 1993 The negative persistent photoconductivity in the deep quantum wells Ikai Lo;W.C. Mitchel;C.E. Stutz;M.Y. Yen
國立中山大學 1993 The Wannier-Stark quantization by internal field in the HgTe/CdTe superlattice Ikai Lo;W.C. Mitchel;K.A. Harris;R.W. Yanka;L.M. Mohnkern;A.R. Reisinger;T.H. Myers
國立中山大學 1993 The Wannier-Stark quantization by internal field in the HgTe/CdTe superlattice Ikai Lo;W.C. Mitchel;K.A. Harris;R.W. Yanka;L.M. Mohnkern;A.R. Reisinger;T.H. Myers
國立中山大學 1993 The negative persistent photoconductivity in the deep quantum wells Ikai Lo;W.C. Mitchel;C.E. Stutz;M.Y. Yen
國立中山大學 1992 Shubnikov-de Haas studies of negative persistent photoconductivity in AlGaSb/InAs quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Spin-splitting and effective mass of the 2-dimentional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells M.O. Manasreh;G. Gumbs;C. Zhang;Ikai Lo;C.A. Bozada;R.W. Dettmer;C.E. Stutz;K.R. Evans;W.C. Mitchel
國立中山大學 1992 Electroreflectance of Surface-Intrinsic-n(+) Type n, Doped GaAs by Using a Large Modulating Field Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effect of Al composition on the deep level donors of AlXGa1-XSb/InAs single quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effective mass of the 2-dimensional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells M.O. Manasreh;G. Gumbs;C. Zhang;C.E. Stutz;K.R. Evans;C.A. Bozada;Ikai Lo;W.C. Mitchel
國立中山大學 1992 Shubnikov-de Haas studies of negative persistent photoconductivity in AlGaSb/InAs quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 A Shubnikov-de Haas study in the strained AlGaSb/InAs quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Effect of Al composition on the deep level donors of AlXGa1-XSb/InAs single quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stutz;K.R. Evans
國立中山大學 1992 Electron effective mass in AlxGa1-xSb/InAs single quantum wells M.O. Manasreh;C.E. Stutz;K.R. Evaiis;G. Gumbs;Ikai Lo;W.C. Mitchel
國立中山大學 1992 Effect of Al composition on the negative persistent photoconductivity in AlxGa1-xSb/InAs single quantum wells Ikai Lo;W.C. Mitchel;M.O. Manasreh;C.E. Stulz;K.R. Evans
國立中山大學 1991 Two dimensional electron gas in GaAs/Al0.3Ga0.7As heterostructures : effective mass Ikai Lo;W.C. Mitchel;R.E. Perrin;R.L. Messham;M.Y. Yen
國立中山大學 1991 Effective masses of two dimensional electron gas in GaAs/AIGaAs heterostructures Ikai Lo;W.C. Mitchel;R.E. Pen-in;R.L. Messham;M.Y. Yen
國立中山大學 1991 A Shubnikov-de Haas study of intersubband scattering in MOCVD grown GaAs/AIGaAs heterostructures Ikai Lo;W.C. Mitchel;R.E. Perrin;R.L. Messham;M.Y. Yen

Showing items 56-80 of 80  (4 Page(s) Totally)
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