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Institution	Date	Title	Author
國立中山大學	1996	sReduction of Post-Weld-Shift in Semiconductor Laser Packaging	W.H. Cheng;W.H. Wang;J.C. Chen;H.Y. Chen;W.T. Chen;S.T. Chang;J.S. Horng;H.H. Lin;M.J. Sun
國立中山大學	1995	Multilayer Dielectric of TiO2/Ta2O5/SiO2 for Temperature-Stable Diode Lasers	A.K. Chu; C.J. Lin; W.H. Cheng
國立中山大學	1995	Multilayer dielectric materials of SiOx/Ta2O5/SiO2 for temperature-stable diode lasers	A.K. Chu;C.J. Lin;W.H. Cheng
國立中山大學	1994-03	Effect of Carrier Lifetime on Mode Partition Noise in Multimode Semiconductor Lasers	W.H. Cheng
國立中山大學	1993-11	High-Speed Fiber Optic Links Using 780 nm Compact Disc Lasers	W.H. Cheng; J. Bechtel
國立中山大學	1993-06	High-Speed 1.3 mm InGaAsP Fabry-Perot Lasers for Digital and Analog Applications	W.H. Cheng; A. Mar; J.E. Bowers; R.T. Huang; C.B. Su
國立中山大學	1992-07	1.3 mm InGaAsP Fabry-Perot Lasers with Reduced Pulse Jitter and Power Penalty	W.H. Cheng; J.M. Dugan;J.C. Miller; D. Renner;T.C. McDermott; C.B. Su
國立中山大學	1992-04	High-Speed Low-Threshold InGaAsP Semi-Insulating Buried Crescent Lasers with 22 GHz Bandwidth	R.T. Huang; D. Wolf; W.H. Cheng;C.L. Jiang; R. Agarwal; A. Mar; J.E. Bowers
國立中山大學	1991-06	High-Speed and Low-Relative-Intensity Noise 1.3 mm InGaAsP Semi-Insulating Buried Crescent Lasers	W.H. Cheng; K.D. Buehring; A. Appelbaum;D. Renner; S. Shin; C.B. Su; A. Mar; J.E. Bowers
國立中山大學	1991-02	Effect of Zinc Diffusion from Overgrown p-InP Layers on Semi-Insulating InP	W.H. Cheng; H. Kuwamoto;A. Appelbaum;D. Renner; S.W. Zehr
國立中山大學	1989	Wide-Band Modulation of 1.3 mm InGaAsP Buried Crescent Lasers with Iron and Cobalt-Doped Semi-Insulating Current Blocking Layers	W.H. Cheng;S.Y. Huang;A. Appelbaum;J. Pooladdej;K.D. Buehring;D. Wolf;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學	1988	Semi-Insulating Cobalt-Doped InP Growth by MOCVD	K.L. Hess;S.W. Zehr;W.H. Cheng;J. Pooladdej;K.D. Buehring;D. Wolf
國立中山大學	1988	Dynamic Characteristics off Semi-Insulating Current Blocking Layers: Application to Modulation Performance of 1.3 mm InGaAsP Lasers	W.H. Cheng;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學	1988	1.3 mm Cobalt-Doped Current Blocking Layers Grown by MOCVD	W.H. Cheng;J. Pooladdej;S.Y. Huang;K.D. Buehring;A. Appelbaum;D. Wolf;D. Renner
國立中山大學	1987	Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers	W.H. Cheng;C.B. Su;K.D. Buehring;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學	1987	Semi-Insulating InP Grown by Low Pressure MOCVD	K.L. Hess;S.W. Zehr;W.H. Cheng;D. Perrachione
國立中山大學	1987	High-Speed and High-Power 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Blocking Layers	W.H. Cheng;C.B. Su;K.D. Buehring;S.Y. Huang;J. Pooladdej;D. Wolf;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學	1987	Effect of Active Layer Thickness on Differential Quantum Efficiency of 1.3 and 1.55mm InGaAsP Injection lasers	W.H. Cheng;C.B. Su;D. Renner
國立中山大學	1986	Effect of Active Layer Thickness on Differential Quantum Efficiency of 1.55 InGaAsP Injection lasers	W.H. Cheng;D. Renner
國立中山大學	1986	Low-Threshold and Wide-Bandwidth 1.3 mm InGaAsP Buried Crescent Injection lasers with Semi-Insulating Current Confinement Layers	W.H. Cheng;C.B. Su;K.D. Buehring;C.P. Chien;J.W. Ure;D. Perrachione;D. Renner;K.L. Hess;S.W. Zehr
國立中山大學	1985	1.55 mm InGaAsP Low-Threshold Buried-Crescent Injection Lasers	W.H. Cheng;L. Perillo;S. Forouhar;O.K. Kim;C.L. Jiang;S.K. Sheem
國立中山大學	1982	Highly Efficient Power Coupling Between GaAlAs Lasers and Tapered-Hemispherical-End Fibers	W.H. Cheng;C.S. Wang;C.J. Hwang
國立中山大學	1982	High-Power Low Divergence Superradiance Diode	C.S. Wang;W.H. Cheng;C.J. Hwang;W.K. Burns;R.P. Moller
國立中山大學	1981	The Optimum Power Coupling from GaAs Lasers into Spherical-Ended Fibers	W.H. Cheng
國立中山大學	1980	Theoretical Description of Phase Diagrams for Nonideal Lipid Mixtures	W.H. Cheng

Showing items 121-145 of 148 (6 Page(s) Totally)
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