臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:36:14Z	Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation	M.-K. Tsai; Y.-W. Wu; S.-W. Tan; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:36:14Z	Observation of current gain collapse in large-area HBT with rectangular emitter and etched base	M. -K. Tsai; S.-W. Tan; W. S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:15:52Z	Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications	M.-K. Tsai; S.-W. Tan; Y.-W. Wu; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:15:52Z	Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors	W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:07Z	InGaP/InGaAs dual gate pseudomorphic high electron mobility transistors	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:07Z	Sub-micron gate by optical lithography using photoresist re-flow and spin-on-glass	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:06Z	Studies and comparisons of a N+-InGaP/delta(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors	W.-S. Lour; M.-K. Tsai; K.-Y. Lai; B.-L. Chen; Y.-J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:06Z	Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y.-J. Yang; YING-JAY YANG
國立臺灣海洋大學	2016-12	Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell	T. H. Huang; H. Lo; C. Lo; M. C. Wu; W. S. Lour
國立臺灣海洋大學	2016-12	Photovoltaic performance of Ge-subcell evaluated directly in Ge-based triple-junction solar cells	W. S. Lour; M. C. Wu; C. Lo; H. Lo; T. H. Huang

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