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機構	日期	題名	作者
臺大學術典藏	2018-09-10T04:36:14Z	Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation	M.-K. Tsai; Y.-W. Wu; S.-W. Tan; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:36:14Z	Observation of current gain collapse in large-area HBT with rectangular emitter and etched base	M. -K. Tsai; S.-W. Tan; W. S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:15:52Z	Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications	M.-K. Tsai; S.-W. Tan; Y.-W. Wu; W.-S. Lour; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T04:15:52Z	Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors	W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:07Z	InGaP/InGaAs dual gate pseudomorphic high electron mobility transistors	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:07Z	Sub-micron gate by optical lithography using photoresist re-flow and spin-on-glass	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y. J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:06Z	Studies and comparisons of a N+-InGaP/delta(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors	W.-S. Lour; M.-K. Tsai; K.-Y. Lai; B.-L. Chen; Y.-J. Yang; YING-JAY YANG
臺大學術典藏	2018-09-10T03:51:06Z	Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing	W.-S. Lour; M.-K. Tsai; K.-C. Chen; Y.-W. Wu; S.-W. Tan; Y.-J. Yang; YING-JAY YANG
國立臺灣海洋大學	2016-12	Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell	T. H. Huang; H. Lo; C. Lo; M. C. Wu; W. S. Lour
國立臺灣海洋大學	2016-12	Photovoltaic performance of Ge-subcell evaluated directly in Ge-based triple-junction solar cells	W. S. Lour; M. C. Wu; C. Lo; H. Lo; T. H. Huang
國立臺灣海洋大學	2016-11	Photovoltaic characteristics of each subcell evaluated in situ in a triple-junction solar cell	W. S. Lour; M. C. Wu; C. Lo; H. Lo; T. H. Huang
國立臺灣海洋大學	2016-10-01	Static and dynamic properties of a GaAs p-i-n position-sensitive detector	Tzu-Hsuan Huang; Hao Lo; Chieh Lo; Meng-Chyi Wu; W. S. Lour
國立臺灣海洋大學	2016-10	Static and dynamic properties of a GaAs p-i-n position-sensitive detector (PSD)	Tzu-Hsuan Huang; Hao Lo; Chieh Lo; Meng-Chyi Wu; W. S. Lour
國立臺灣海洋大學	2016-09-16	Photovoltaic performance of Ge-subcell evaluated directly in Ge-based triple-junction solar cells	T. H. Huang; H. Lo; C. Lo; M. C. Wu; W. S. Lour
國立臺灣海洋大學	2010-10-28	Gate voltage swing enhancement of InGaP/ InGaAs pseudomorphic HFET with low-to-high double doping channels	J.-H. Tsai; W.-S. Lour; C.-H. Huang; S.-S. Ye; Y.-C. Ma
國立臺灣海洋大學	2009-03	GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration	W.S. Lour*; J.H. Tsai; H.W. Huang; K.P. Liu; T.H. Huang; K.C. Liang; S.Y. Chiu
國立臺灣海洋大學	2009-03	Comprehensive study of Pd/GaN metal-semiconductor-metal hydrogen sensors with symmetrically bi-directional sensing performance	W.S. Lour; J.H. Tsai; K.P. Liu; K.C. Liang; T.H. Huang; H.W. Huang; S.Y. Chiu
國立臺灣海洋大學	2009-02	GaN hydrogen sensor with Pd-SiO2 mixture forming sensing nanoparticles	S.Y. Chiu;H.W. Huang;K.C. Liang;T.H. Huang; K.P. Liu;J.H. Tsai;W.S. Lour
國立臺灣海洋大學	2009-02	High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2	S.Y. Chiu; H.W. Huang; K.C. Liang; T.H. Huang; K.P. Liu; J.H. Tsai; W.S. Lour
國立臺灣海洋大學	2009	GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles	S. Y. Chiu;H. W. Huang;K. C. Liang;T. H. Huang;K. P. Liu;J. H. Tsai;W. S. Lour
國立臺灣海洋大學	2009	InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer	J.-H. Tsai; Y.-H. Lee; N.-F. Dale; W.-S. Lour
國立臺灣海洋大學	2009	InGaP/GaAs/InGaAs δ-doped p-channel field-effect transistor with p +/n +/p camel-like gate structure	J.-H. Tsai; W.-S. Lour; W.-C. Liu
國立臺灣海洋大學	2008-10	Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/ Al0.22Ga0.78As double heterojunction high electron mobility transistors	M K Hsu; S Y Chiu; C H Wu; W S Lour; D F Guo
國立臺灣海洋大學	2007	Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate	M K Hsu;H R Chen;S Y Chiu;W T Chen;W C Liu;J H Tasi;W S Lour
國立臺灣海洋大學	2007	Characterization of a self-built field-plate gate on InGaP/InGaAs heterojunction doped-channel field-effect transistors	H R Chen;M K Hsu;S Y Chiu;W T Chen;D F Guo;W S Lour
國立臺灣海洋大學	2007	Performance of Al0.24Ga0.76As/In0.22Ga0.78As double-heterojunction HEMTs with an as deposited and a buried gate	H. R. Chen;M. K. Hsu;S. Y. Chiu;W. T. Chen;G. H. Chen;Y. C. Chang;C. C. Su;W. S. Lour
國立臺灣海洋大學	2006-12	InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal	H. R. Chen;M. K. Hsu;S. Y. Chiu;W. T. Chen;G. H. Chen;Y. C. Chang;W. S. Lour
國立臺灣海洋大學	2006-07	Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor	W.T. Chen;H.R. Chen;M.K. Hsu;S.Y. Chiu;G.H. Chen;Y.C. Chang;W.S. Lour
國立高雄師範大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Jung-Hui Tsai;T. P. Chen;S. I. Fu;W. S. Lour;. F. Guo; S. Y. Cheng;W. C. Liu; 蔡榮輝
國立臺灣海洋大學	2006	Gate-metal formation-related kink effect and gate current on In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor performance	M. K. Hsu;H. R. Chen;S. Y. Chiou;W. T. Chen;G. H. Chen;Y. C. Chang;W. S. Lour
國立臺灣海洋大學	2005	Comprehension and modelling of heterojunction phototransistors operated in the Gummel-plot and common-emitter modes	H R Chen;W T Chen;M K Hsu;S W Tan;W S Lour
國立臺灣海洋大學	2005	Fringing effects of V-shape gate metal on GaAs/InGa/PInGaAs doped-channel field-effect transistors	H R Chen;W T Chen;M K Hsu;S W Tan;W S Lour
國立臺灣海洋大學	2005	The influence of base bias on the collector photocurrent for InGaP/GaAs heterojunction phototransistors	S. W. Tan;H. R. Chen;W. T. Chen;M. K. Hsu;A. H. Lin;W. S. Lour
國立臺灣海洋大學	2004	Performance enhancement of double-emitter HPTs with different emitter-area ratios	S.W. Tan; H.R. Chen; A.H. Lin; W.T. Chen; W.S. Lour
國立臺灣海洋大學	2004	Sub-0.25 micron gate like heterojunction doped-channel FETs with a controllable notch-angle V-gate	S W Tan; M K Hsu; A H Lin; M Y Chu; W T Chen; W S Lour
國立臺灣海洋大學	2004	Sub-0.5-um gate doped-channel FETs with HEMT-like channel using thermally re-flowed photo-resist and spin-on-glass	S W Tan, W T Chen; M Y Chu; W S Lour
國立臺灣海洋大學	2004	Experiments and Modeling of Double-Emitter HPTs with Different Emitter-Area Ratios for Functional Applications	S W Tan; H R Chen; A H Lin; W T Chen; W S Lour
國立臺灣海洋大學	2002-03	Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors	W.-S.Lour; M.-K.Tsai; K.-C.Chen; S.-W.Tan; Y.-W.Wu; Y.-J.Yang
國立臺灣海洋大學	2002-01-10	Depletion- and enhancement-mode InGaP/GaAs δ-HEMT’s for Low supply-voltage applications	M-K Tsai; S-W Tan; Y-W Wu; W-S Lour; Y-J Yang
國立臺灣海洋大學	2001-08-30	Dual-Gate In0.5Ga0.5PIn0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing	W-S Lour; M-K Tsai; K-C Chen; Y-W Wu; S-W Tan; Y-J Yang
國立臺灣海洋大學	1996-02	VPE grown ZnSe/Si Pin-like visible photodiodes	W. S. Lour; C. C. Chang
國立高雄師範大學	1990	Electronic Transport in Graded-Period Delta-Doped Superlattice	Ruey-Lue Wang;W. C. Liu;W. S. Lour;C. Y. Sun;C. C. Hong; 王瑞祿
國立高雄師範大學	1989	Superlattice gate power MESFET grown by MBE	Ruey-Lue Wang;W. C. Liu;C.Y. Chang;W. C. Hsu;W. S. Lour; 王瑞祿
國立高雄師範大學	1989	Superlattice gate and graded superlattice buffer for microwave power metal–semiconductor field effect transistor grown by molecular?beam epitaxy	Ruey-Lue Wang;W. C. Liu;C. Y. Chamg ; W. C. Hsu;W. S. Lour; 王瑞祿

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