臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 26-35 of 57 (6 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣海洋大學	2000-10-26	To Suppress Dark Current of High Temperature -SiC/Si Optoelectronic Devices with Porous Silicon	W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
國立臺灣海洋大學	2000-05	An a-SiGeH Phototransistor Integrated a Pd Film on Glass Substrate for Hydrogen Monitoring	W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
國立臺灣海洋大學	2000-05	An a-SiGeH Phototransistor Integrated a Pd Film on Glass Substrate for Hydrogen Monitoring	W.T. Hsieh; Y.K. Fang; W.J. Lee; K.H. Wu; J.J. Ho; K.H. Chen; S.Y. Huang
南台科技大學	2000-02	Effects of Surface Porosity on Tungsten Trioxide(WO3) Films’ Electrochromic Performance	W. J. Lee; Y. K. Fang; J. J. Ho; W. T. Hsieh; S. F. Ting; Daoyang Huang; Fang C. Ho;謝文哲
國立臺灣海洋大學	2000-02	Effects of Surface Porosity on Tungsten Trioxide (WO3) Films’Electrochromic Performance	W. J. Lee; Y. K. Fang; Jyh-Jier Ho; W. T. Hsieh; S. F. Ting; Daoyang Huang; Fang C. Ho
國立臺灣海洋大學	2000-01-06	Improvement of beta-SiC/Si pn Diode High Temperature Characteristics with Porous Silicon Layer	W.T. Hsieh; Y.K. Fang; W.J. Lee; C.W. Ho; K.H. Wu; J.J. Ho; J.D. Hwang
南台科技大學	2000-01	Improvement of β-SiC / Si pn diode high temperature characteristics with porous silicon laye	W. T. Hsieh; Y. K. Fang; W. J Lee; C. W. Ho; K. H. Wu; J. J. Ho; J. D. Hwang;謝文哲
南台科技大學	2000	To suppress dark current of high temperature β-SiC/Sioptoelectronic devices with porous silicon substrate	吳坤憲; W. T. Hsieh; Y. K. Fang; W. J. Lee; C. W. Ho; K. H. Wu
南台科技大學	2000	Improvement of β-SiC/Si pn diode high temperature characteristics with porous silicon layer	吳坤憲; W. T. Hsieh; Y. K. Fang; W. J. Lee; C. W. Ho; K. H. Wu; J. J. Ho; J. D. Hwang
南台科技大學	2000	To suppress dark current of high temperature β-SiC/Sioptoelectronic devices with porous silicon substrate	吳坤憲; W. T. Hsieh; Y. K. Fang; K. H. Wu; W. J. lee; J. J. Ho; C. W. Ho

Showing items 26-35 of 57 (6 Page(s) Totally)
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