臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	Repositories
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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	臺大學術典藏NTU Scholars

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Institution	Date	Title	Author
中原大學	2009-12	Fabrication of ZnO nanorods on Si substrates by atmospheric pressure metalorganic chemical vapor deposition	H. Y. Hsieh;W. Y. Uen;S. M. Lan;Y. C. Huang;T. N. Yang;Z. Y. Li;J. W. Chen;Y. H. Huang
國立臺灣海洋大學	2007-08-15	The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer	K.J. Chang;S.M. Lahn;Z.J. Xie;J.Y. Chang;W.Y. Uen;T.U. Lu;J.H. Lin;T.Y. Lin
中原大學	2004-01	Optical properties of Nd-doped InGaAsP epilayers	Y.C. Lee;G.W. Shu;J.L. Shen;W.Y. Uen;Y.F. Chen
中原大學	2004-01	Optical properties of Nd-doped InGaAsP epilayers	Y.C. Lee;G.W. Shu;J.L. Shen;W.Y. Uen;Y.F. Chen
中原大學	2003-12-04	Optical studies of the Holmium-doped InGaAsP epilayers	Y. C. Lee;G. W. Shu;I. M. Cheng;C. P. Chen;J. L. Shen;W. Y. Uen;C. W. Chang;Y. F. Chen;W. C. Chou
中原大學	2003-12	Optical Studies of the Holmium-doped InGaAsP Epilayers	Y. C. Lee;G. W. Shu;I. M. Cheng;C. P. Chen;J. L. Shen;W. Y. Uen;C. W. Chang;Y. F. Chen;W. C. Chou
中原大學	2002	Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers	J.L. Shen;Y.C. Lee;G.W. Shu;W.C. Chou;W.Y. Uen
中原大學	2002	Persistent photoconductivity in Ho-doped InGaAsP epitaxial layers	Y.C. Lee;G.W. Shu;W.C. Chou;J.L. Shen;W.Y. Uen
中原大學	2002	Observation of persistent photoconductivity in quaternary InGaAsP epitaxial layers	J.L. Shen;Y.C. Lee;G.W. Shu;W.C. Chou;W.Y. Uen
中原大學	2002	Persistent photoconductivity in Ho-doped InGaAsP epitaxial layers	Y.C. Lee;G.W. Shu;W.C. Chou;J.L. Shen;W.Y. Uen
中原大學	2001-10-12	Influence of Holmium Doping on the optical properties of Quaternary InGaAsP Epitaxial Layers	Y. C. Lee;H. T. Shu;J. L. Shen;K. F. Liao;W. Y. Uen
中原大學	2001	Influence of holmium doping on the optical properties of quaternary InGaAsP epitaxial layers	Y. C. Lee;H. T. Shu;J. L. Shen;K. F. Liao;W. Y. Uen
中原大學	2000-02-01	The Effect of Substrate Misorientation Angle on the Band Gap Energies of II-VI Compound Semiconductors Grown by Molecular Beam Epitaxy	D. M. Chen;C. S. Yang;F. B. Chuang;Y. W. Tzeng;C. C. Wei;C. S. Ro;K. Y. Lan;W. C. Chou;W. H. Lan;W. Y. Uen
中原大學	2000-02	The Effect of Substrate Misorientation Angle on the Band Gap Energies of II-VI Compound Semiconductors Grown by Molecular Beam Epitaxy	D.M. Chen;C.S. Yang;F.B. Chuang;Y.W. Tzeng;C.C. Wei;C.S. Ro;K.Y. Lan;W.C. Chou;W.H. Lan;W.Y. Uen
中原大學	1998-03	Optical properties of the ZnSe1-xTex epilayers grown by molecular beam epitaxy	C. S. Yang;D. Y. Hong;C. Y. Lin;W. C. Chou;C. S. Ro;W. Y. Uen;W. H. Lan;S. L. Tu
中原大學	1998	Optical Properties of the ZnSe1-xTex Epilayers Grown by Molecular Beam Epitaxy	C. S. Yang;D. Y. Hong;C. Y. Lin;W. C. Chou;C. S. Ro;W. Y. Uen;W. H. Lan;S. L. Tu
中原大學	1998	Optical Properties of Zn1-xMnxSe Epilayers Grown by Molecular Beam Epitaxy	W. C. Chou;C. S. Ro;D. Y. Hong;C. S. Yang;C. Y. Lin;T. Y. Lin;K. C. Chiu;T. R. Yang;C. M. Lin;D. S. Chuu;W. Y. Uen
中原大學	1998	Optical Properties of Zn1-xMnxSe Epilayers Grown by Molecular Beam Epitaxy	W. C. Chou;C. S. Ro;D. Y. Hong;C. S. Yang;C. Y. Lin;T. Y. Lin;K. C. Chiu;T. R. Yang;C. M. Lin;D. S. Chuu;W. Y. Uen
中原大學	1998	Optical Properties of Zn1-xMnxSe Epilayers Grown by Molecular Beam Epitaxy	W. C. Chou;C. S. Ro;D. Y. Hong;C. S. Yang;C. Y. Lin;T. Y. Lin;K. C. Chiu;T. R. Yang;C. M. Lin;D. S. Chuu;W. Y. Uen
中原大學	1998	Optical Properties of ZnSe1-xSx Epilayers Grown on Misoriented GaAs Substrates	W. C. Chou;C. S. Yang;A. H. M. Chu;A. J. Yeh;C. S. Ro;W. H. Lan;S. L. Tu;R. C. Tu;S. C. Chou;Y. K. Su;W. Y. Uen
中原大學	1998	Optical Properties of Zn1-xMnxSe Epilayers Grown by Molecular Beam Epitaxy	W.C.Chou;C.S.Ro;W.Y.Uen
中原大學	1997	A nonlinear three-dimensional rupture theory of thin liquid films	C.C.Huang;C.K.Lin;W.Y.Uen
中原大學	1995	Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 degree-misoriented epitaxial Si substrates	W.Y.Uen;T.Nishinaga
中原大學	1995	Molecular beam epitaxy of gallium arsenide on 0.3degree-misoriented epitaxial Si substrates	W.Y.Uen;T.Ohori;T.Nishinaga
中原大學	1993	Growth of GaAs on Si by employing AlAs/GaAs Double Amorphous Buffer	W.Y.Uen;T.Nishinaga

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