| 臺大學術典藏 |
2018-09-10T05:58:01Z |
Flexible stainless steel substrates for a-Si display backplanes
|
Wagner, S.; Cheng, I.-C.; Kattamis, A.Z.; Cannella, V.; Hong, Y.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Thermomechanical criteria for overlay alignment in flexible thin-film electronic circuits
|
Gleskova, H.; Cheng, I.-C.; Wagner, S.; Suo, Z.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Stainless steel foil substrates: Robust, low-cost, flexible active-matrix backplane technology
|
Hong, Y.; Heller, G.; Cheng, I.-C.; Kattamis, A.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C
|
Long, K.; Kattamis, A.Z.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
SiNx barrier layers deposited at 250°C on a clear polymer substrate
|
Cherenack, K.; Kattamis, A.; Long, K.; Cheng, I.-C.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:58:00Z |
Self-aligned amorphous-silicon TFTs on clear plastic substrates
|
Cheng, I.-C.; Kattamis, A.Z.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:04Z |
Mechanics of TFT Technology on Flexible Substrates
|
Wagner, S.; Gleskova, H.; Cheng, I.-C.; Sturm, J.C.; Suo, Z.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:04Z |
Managing mechanical stress in flexible active-matrix backplanes
|
Wagner, S.; Cheng, I.-C.; Long, K.; Kattamis, A.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:04Z |
Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures
|
Long, K.; Kattamis, A.; Cheng, I.-C.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:04Z |
High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates
|
Long, K.; Kattamis, A.; Cheng, I.-C.; Gao, Y.X.; Gleskova, H.; Wagner, S.; Sturm, J.C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:04Z |
Flexible stainless-steel substrates
|
Cannella, V.; Izu, M.; Jones, S.; Wagner, S.; Cheng, I.-C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:03Z |
Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates
|
Cheng, I.-C.; Kattamis, A.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T05:23:03Z |
Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates
|
Kattamis, A.; Cheng, I.-C.; Long, K.; Sturm, J.C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:53:23Z |
Monolithically integrated p- & n- channel thin film transistors of nanocrystalline silicon on plastic substrates
|
Cheng, I.-C.;Wagner, S.; Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:53:23Z |
Hydrogen in ultralow temperature SiO 2 for nanocrystalline silicon thin film transistors
|
Kattamis, A.;Cheng, I.-C.;Allen, S.;Wagner, S.; Kattamis, A.; Cheng, I.-C.; Allen, S.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Thin film transistors made of nanocrystalline silicon for CMOS on plastic
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Silicon for thin-film transistors
|
Wagner, S.; Gleskova, H.; Cheng, I.-C.; Wu, M.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
Nanocrystalline silicon thin film transistors
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:32:47Z |
High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T04:12:41Z |
Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150°C
|
Cheng, I.-C.; Wagner, S.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:47:44Z |
Polycrystalline silicon thin-film transistors
|
Wagner, S.; Wu, M.; Min, B.-G.R.; Cheng, I.-C.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:47:44Z |
High electron mobility TFTs of nanocrystalline silicon deposited at 150°C on plastic foil
|
Cheng, I.-C.; Wagner, S.; Bae, S.; Fonash, S.J.; I-CHUN CHENG |
| 臺大學術典藏 |
2018-09-10T03:29:29Z |
Thin film transistors with electron mobility of 40 cm2V-1s-1 made from directly deposited intrinsic microcrystalline silicon
|
Cheng, I.-C.; Wagner, S.; Mulato, M.; I-CHUN CHENG |
| 國立臺灣大學 |
2009-02 |
FLEXIBLE ELECTRONICS: MATERIALS AND APPLICATIONS(CH1)
|
Cheng, I-Chun; Wagner, S. |
| 臺大學術典藏 |
2009-02 |
FLEXIBLE ELECTRONICS: MATERIALS AND APPLICATIONS(CH1)
|
Cheng, I-Chun; Wagner, S.; Cheng, I-Chun; Wagner, S. |
