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Showing items 1-19 of 19 (1 Page(s) Totally)
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| 臺大學術典藏 |
2022-03-22T15:05:12Z |
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3as a gate dielectric
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Young, L. B.; Liu, J.; Lin, Y. H.G.; Wan, H. W.; Chiang, L. S.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
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Lin K.Y;Young L.B;Cheng C.K;Chen K.H;Lin Y.H;Wan H.W;Cai R.F;Lo S.C;Li M.Y;Kwo J;Hong M.; Lin K.Y; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
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Wan H.-W;Hong Y.-J;Cheng Y.-T;Cheng C.-K;Hsu C.-H;Wu C.-T;Pi T.-W;Kwo J;Hong M.; Wan H.-W; Hong Y.-J; Cheng Y.-T; Cheng C.-K; Hsu C.-H; Wu C.-T; Pi T.-W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
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Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-21T23:21:09Z |
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
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Lin, Y. H.G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2021-06-22T02:00:31Z |
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
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Young, L.B.;Cheng, C.-K.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Cai, R.-F.;Lo, S.-C.;Li, M.-Y.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Cai, R.-F.; Lo, S.-C.; Li, M.-Y.; Hsu, C.-H.; Kwo, J.; Hong, M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Surface electronic structure of Si1-xGe x(001)-2 × 1: A synchrotron radiation photoemission study
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Cheng, Y.-T.;Wan, H.-W.;Cheng, C.-K.;Cheng, C.-P.;Kwo, J.;Hong, M.;Pi, T.-W.; Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
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Cheng, Y.-T.;Wan, H.-W.;Cheng, C.-K.;Cheng, C.-P.;Kwo, J.R.;Hong, M.;Pi, T.-W.; Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.R.; Hong, M.; Pi, T.-W.; CHIA-KUEN CHENG |
| 國立交通大學 |
2020-07-01T05:21:21Z |
Exciton Localization of High-Quality ZnO/MgxZn1-x Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer
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Liu, Wei-Rein; Huang, Wei-Lun; Wu, Yung-Chi; Lai, Liang-Hsun; Hsu, Chia-Hung; Hsieh, Wen-Feng; Chiang, Tsung-Hung; Wan, H. W.; Hong, M.; Kao, J. |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
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Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study
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Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:16Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Surface electronic structure of epi germanium (001)-2 ? 1
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Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface
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Wan, H.W.; Lin, Y.H.; Lin, K.Y.; Chang, T.W.; Cai, R.F.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:15Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)
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Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 ??In comparison with atomic layer deposited Al2O3
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Wan, H.W.;Lin, K.Y.;Cheng, C.K.;Su, Y.K.;Lee, W.C.;Hsu, C.H.;Pi, T.W.;Kwo, J.;Hong, M.; Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:14Z |
Perfecting the Al2O3/In0.53Ga0.47As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition
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Hong, M.; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:11Z |
Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
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MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B. |
Showing items 1-19 of 19 (1 Page(s) Totally)
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