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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:34Z |
Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology
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Wang, HCH; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:44:15Z |
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
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Wang, HCH; Wang, CC; Chang, CS; Wang, TH; Griffin, PB; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:42:55Z |
Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
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Wang, HCH; Wang, CC; Diaz, CH; Liew, BK; Sun, JYC; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs
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Chan, CT; Tang, CJ; Kuo, CH; Ma, HC; Tsai, CW; Wang, HCH; Chi, MH; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Positive bias and temperature stress induced two-stage drain current degradation in HfSiON nMOSFET's
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Chan, CT; Tang, CJ; Wang, T; Wang, HCH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:18:54Z |
Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys
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Li, TL; Hu, CH; Ho, WL; Wang, HCH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:16:38Z |
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient
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Wang, TH; Chan, CT; Tang, CJ; Tsai, CW; Wang, HCH; Chi, MH; Tang, DD |
| 國立交通大學 |
2014-12-08T15:16:28Z |
Novel dual-metal gate technology using Mo-MoSix combination
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Li, TL; Ho, WL; Chen, HB; Wang, HCH; Chang, CY; Hu, CM |
Showing items 1-8 of 8 (1 Page(s) Totally)
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