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Taiwan Academic Institutional Repository >
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"wang jer chyi"
Showing items 11-21 of 21 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 亞洲大學 |
2015-03 |
Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulatoresemiconductor structure for pH sensing characteristics
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Ren, Chang;Ren, Chang;Ya, Chia-Ming;Yang, Chia-Ming;Lyu, Chengang;Lyu, Chengang;Hs, Chin-Yuan;Hsu, Chin-Yuan;Tsung-Cheng;Chen, Tsung-Cheng;Wa, Hau-Cheng;Wang, Hau-Cheng;Yang, Hao;Yang, Hao;Lin, Wei-Tse;Lin, Wei-Tse;Dorota, G.Pi;Dorota, G.Pijanowska;Wan, Jer-Chyi;Wang, Jer-Chyi;蔡宗叡;TSAI, JUNG-RUEY |
| 國立交通大學 |
2014-12-08T15:16:43Z |
A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Ma, Ming-Wen; Lai, Chao-Sung; Yang, Tsung-Yu; Chen, Tzu-Ping; Chen, Chien-Hung; Lin, Chih-Hung; Chen, Hwi-Huang; Ko, Joe |
| 國立交通大學 |
2014-12-08T15:15:05Z |
High-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasma treatment
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Wu, Woei Cherng; Lai, Chao Sung; Wang, Jer Chyi; Chen, Jian Hao; Ma, Ming Wen; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:14:34Z |
Highly reliable multilevel and 2-bit/cell operation of wrapped select gate (WSG) SONOS memory
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Wu, Woei-Cherng; Chao, Tien-Sheng; Peng, Wu-Chin; Yang, Wen-Luh; Wang, Jer-Chyi; Chen, Jian-Hao; Lai, Chao-Sung; Yang, Tsung-Yu; Lee, Chien-Hsing; Hsieh, Tsung-Min; Liou, Jhyy Cheng |
| 國立交通大學 |
2014-12-08T15:12:56Z |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:12:52Z |
Current transport mechanism for HfO2 gate dielectrics with fluorine incorporation
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Wu, Woei Cherng; Lai, Chao Sung; Wang, Tzu Ming; Wang, Jer Chyi; Hsu, Chih Wei; Ma, Ming Wen; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:11:13Z |
Carrier transportation mechanism of the TaN/HfO(2)/IL/Si structure with silicon surface fluorine implantation
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Wu, Woei Cherng; Lai, Chao-Sung; Wang, Tzu-Ming; Wang, Jer-Chyi; Hsu, Chih Wei; Ma, Ming Wen; Lo, Wen-Cheng; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:10:35Z |
Positive Bias Temperature Instability (PBTI) Characteristics of Contact-Etch-Stop-Layer-Induced Local-Tensile-Strained HfO(2) nMOSFET
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng |
| 國立交通大學 |
2014-12-08T15:07:34Z |
Performance enhancement for strained HfO(2) nMOSFET with contact etch stop layer (CESL) under pulsed-IV measurement
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Wu, Woei-Cherng; Chao, Tien-Sheng; Chiu, Te-Hsin; Wang, Jer-Chyi; Lai, Chao-Sung; Ma, Ming-Wen; Lo, Wen-Cheng; Ho, Yi-Hsun |
| 國立成功大學 |
2012-06-30 |
Microstructural effect of gadolinium oxide nanocrystals upon annealing on electrical properties of memory devices
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Huang, Michael R. S.; Liu, Chuan-Pu; Wang, Jer-Chyi; Chen, Yu-Kai; Lai, Chao-Sung; Fang, Yu-Ching; Shu, Li |
| 國立成功大學 |
2009 |
Characteristics of Gadolinium Oxide Nanocrystal Memory with Optimized Rapid Thermal Annealing
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Wang, Jer-Chyi; Lai, Chao-Sung; Chen, Yu-Kai; Lin, Chih-Ting; Liu, Chuan-Pu; Huang, Michael R. S.; Fang, Yu-Ching |
Showing items 11-21 of 21 (1 Page(s) Totally) 1 View [10|25|50] records per page
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