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机构 日期 题名 作者
國立交通大學 2014-12-08T15:44:38Z Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots Wang, JS; Chen, JF; Huang, JL; Wang, PY; Guo, XJ
國立交通大學 2014-12-08T15:44:13Z Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes Chen, JF; Chen, NC; Wang, JS; Chen, YF
國立交通大學 2014-12-08T15:43:53Z Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs Chen, JF; Huang, MM; Wang, JS
國立交通大學 2014-12-08T15:41:13Z Epidemiology of haptoglobin phenotypes in chronic diseases Cheng, TM; Pan, JP; Wang, JS; Mao, SJT
國立交通大學 2014-12-08T15:39:36Z High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY
國立交通大學 2014-12-08T15:38:32Z Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing Chen, JF; Hsiao, RS; Shih, SH; Wang, PY; Wang, JS; Chi, JY
國立交通大學 2014-12-08T15:37:23Z Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m Wang, JS; Hsiao, RS; Lin, G; Lin, KF; Liu, HY; Lai, CM; Wei, L; Liang, CY; Chi, JY; Kovsh, AR; Maleev, NA; Livshits, DA; Chen, JF; Yu, HC; Ustinov, VM
國立交通大學 2014-12-08T15:37:14Z Single mode 1.3 mu m InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy Hsiao, RS; Wang, JS; Lin, KF; Wei, L; Liu, HY; Liang, CY; Lai, CM; Kovsh, AR; Maleev, NA; Chi, JY; Chen, JF
國立交通大學 2014-12-08T15:19:34Z Efg1 involved in drug resistance by regulating the expression of ERG3 in Candida albicans Lo, HJ; Wang, JS; Lin, CY; Chen, CG; Hsiao, TY; Hsu, CT; Su, CL; Fann, MJ; Ching, YT; Yang, YL
國立交通大學 2014-12-08T15:19:20Z Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy Chang, KP; Yang, SL; Chuu, DS; Hsiao, RS; Chen, JF; Wei, L; Wang, JS; Chi, JY

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