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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:46:17Z Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature Chen, JF; Wang, JS; Wang, PY; Wong, HZ
國立交通大學 2014-12-08T15:46:08Z Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells Chen, JF; Wang, PY; Tsai, CY; Wang, JS; Chen, NC
國立交通大學 2014-12-08T15:46:07Z Observation of a dominant EL2-like mid-gap trap in In0.12Ga0.88As/GaAs superlattice grown at low temperature by molecular beam epitaxy Chen, JF; Wang, PY; Wang, JS; Wong, HZ
國立交通大學 2014-12-08T15:46:00Z Capacitance dispersion in n-LT-i-p GaAs structures with the low-temperature layers grown at different temperatures Chen, JF; Chen, NC; Wang, PY; Wang, JS; Weng, CM
國立交通大學 2014-12-08T15:45:55Z Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n(+)-p structures Chen, JF; Wang, JS; Wang, PY; Chen, NC; Hsu, NC
國立交通大學 2014-12-08T15:45:42Z Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence Chen, JF; Wang, PY; Wang, JS; Chen, NC; Guo, XJ; Chen, YF
國立交通大學 2014-12-08T15:45:42Z Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes Chen, JF; Wang, PY; Wang, JS; Tsai, CY; Chen, NC
國立交通大學 2014-12-08T15:45:39Z Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes Chen, JF; Chen, NC; Wang, JS; Wang, PY
國立交通大學 2014-12-08T15:45:22Z Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy Chen, JF; Wang, JS; Huang, MM; Chen, NC
國立交通大學 2014-12-08T15:45:13Z Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes Chen, JF; Wang, PY; Wang, JS; Wong, HZ

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