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"wang jyh shyang"的相關文件
顯示項目 21-30 / 30 (共3頁) << < 1 2 3 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2001 |
Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
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Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang; Chen, Guan-Ru; Lin, Hao-Hsiung; Wang, Jyh-Shyang; Shih, Ding-Kang |
| 臺大學術典藏 |
2001 |
Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Song, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
2000-05 |
Growth and characterization of InAsN alloys
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 臺大學術典藏 |
2000-05 |
Growth and characterization of InAsN alloys
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Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Sung, Li-Wei; Chen, Guan-Ru |
| 國立臺灣大學 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1999 |
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
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Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1999 |
Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Hsieh, K. Y.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1998 |
Very thin layers of TlP grown on InP using gas source molecular beam epitaxy
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Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung; Liu, Jin-Shung; Wang, Jyh-Shyang; Lin, Hao-Hsiung |
| 中原大學 |
1995 |
溫度變化下碳六十晶體的光穿透與光電導頻譜
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王智祥; Wang, Jyh Shyang |
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