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"wang sc"
Showing items 126-175 of 322 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:15Z |
High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
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Tsai, JY; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:12Z |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
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Hsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
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Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
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Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:41Z |
Numerical study of multiple-pass effect by total internal reflection on second-harmonic conversion in KBe2BO3F2 crystal
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Chang, LB; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
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Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:35Z |
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
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Lu, TC; Tsai, JY; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:31Z |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
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Kuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
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Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
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Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:24Z |
Purification of multi-walled carbon nanotubes by microwave digestion method
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Chen, CM; Chen, M; Leu, FC; Hsu, SY; Wang, SC; Shi, SC; Chen, CF |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Study of GaN light-emitting diodes fabricated by laser lift-off technique
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Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:09Z |
As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
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Laih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:53Z |
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
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Chang, YH; Lai, FI; Lu, CY; Kuo, HC; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:47Z |
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
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Lai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
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Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
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Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:22Z |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
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Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
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Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:11Z |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
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Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
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Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Fabricating thin-film transistors on plastic substrates using spin etching and device transfer
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Wang, SC; Yeh, CF; Hsu, CT; Lou, JC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
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Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:02Z |
Process improvement and reliability characteristics of spin-on poly-3-hexylthiophene thin-film transistor
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Wang, SC; Lou, JC; Liou, BL; Lin, RX; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
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Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:36:25Z |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
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Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:12Z |
Evaluation of hot workability of H13 through processing map
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Wang, SC; Chou, CP; Lin, CH; Chang, CC |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy
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Fang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:06Z |
Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride
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Lee, CK; Kao, FJ; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser
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Chen, YF; Liao, CC; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures
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Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:50Z |
Efficient all-solid-state deep ultraviolet laser source
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Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:26:44Z |
Frequency stabilizations of GaN blue diode laser
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Chang, F; Lee, HY; Huang, MS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:29Z |
High-power diode-end-pumped passively mode-locked Nd : YVO4 laser with a relaxed saturable Bragg reflector
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Tsai, SW; Lan, YP; Wang, SC; Huang, KF; Chen, YF |
| 國立交通大學 |
2014-12-08T15:26:29Z |
Dynamics of Laguerre Gaussian TEMo,l* mode in a solid-state laser
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Lan, YP; Wang, SC; Chen, YF |
| 國立交通大學 |
2014-12-08T15:26:27Z |
Micro-photoluminescence from V-shape inverted pyramid in HVPE grown GaN film
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Lee, CK; Chen, YB; Chang, SC; Pan, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:06Z |
Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers
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Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:02Z |
MOCVD growth of AlN/GaN DBR structure under various ambient conditions
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Yao, HH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
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Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
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Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:48Z |
Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process
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Wang, SC; Hsu, CT; Yeh, CF; Lou, JC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
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Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
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Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
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Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
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Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
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Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
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Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC |
Showing items 126-175 of 322 (7 Page(s) Totally)
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