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Showing items 141-165 of 322  (13 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:37:27Z Investigation of GaN LED with Be-implanted Mg-doped GaN layer Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF
國立交通大學 2014-12-08T15:37:26Z Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:37:22Z Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers Chang, YA; Kuo, HC; Chang, YH; Wang, SC
國立交通大學 2014-12-08T15:37:18Z Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC
國立交通大學 2014-12-08T15:37:15Z Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:37:11Z Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:37:10Z MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC
國立交通大學 2014-12-08T15:37:09Z Fabricating thin-film transistors on plastic substrates using spin etching and device transfer Wang, SC; Yeh, CF; Hsu, CT; Lou, JC
國立交通大學 2014-12-08T15:37:05Z Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC
國立交通大學 2014-12-08T15:37:02Z Process improvement and reliability characteristics of spin-on poly-3-hexylthiophene thin-film transistor Wang, SC; Lou, JC; Liou, BL; Lin, RX; Yeh, CF
國立交通大學 2014-12-08T15:37:01Z Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF
國立交通大學 2014-12-08T15:36:25Z High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC
國立交通大學 2014-12-08T15:27:12Z Evaluation of hot workability of H13 through processing map Wang, SC; Chou, CP; Lin, CH; Chang, CC
國立交通大學 2014-12-08T15:27:08Z Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy Fang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC
國立交通大學 2014-12-08T15:27:06Z Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride Lee, CK; Kao, FJ; Wang, SC; Pan, CL
國立交通大學 2014-12-08T15:27:02Z Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser Chen, YF; Liao, CC; Lan, YP; Wang, SC
國立交通大學 2014-12-08T15:27:01Z Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC
國立交通大學 2014-12-08T15:26:50Z Efficient all-solid-state deep ultraviolet laser source Chang, LB; Wang, SC; Kung, AH
國立交通大學 2014-12-08T15:26:44Z Frequency stabilizations of GaN blue diode laser Chang, F; Lee, HY; Huang, MS; Wang, SC
國立交通大學 2014-12-08T15:26:29Z High-power diode-end-pumped passively mode-locked Nd : YVO4 laser with a relaxed saturable Bragg reflector Tsai, SW; Lan, YP; Wang, SC; Huang, KF; Chen, YF
國立交通大學 2014-12-08T15:26:29Z Dynamics of Laguerre Gaussian TEMo,l* mode in a solid-state laser Lan, YP; Wang, SC; Chen, YF
國立交通大學 2014-12-08T15:26:27Z Micro-photoluminescence from V-shape inverted pyramid in HVPE grown GaN film Lee, CK; Chen, YB; Chang, SC; Pan, CL; Wang, SC
國立交通大學 2014-12-08T15:26:06Z Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:26:02Z MOCVD growth of AlN/GaN DBR structure under various ambient conditions Yao, HH; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:25:59Z Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC

Showing items 141-165 of 322  (13 Page(s) Totally)
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