English  |  正體中文  |  简体中文  |  Total items :0  
Visitors :  52206031    Online Users :  1285
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
About TAIR

Browse By

News

Copyright

Related Links

"wang sc"

Return to Browse by Author
Sorting by Title Sort by Date

Showing items 161-210 of 322  (7 Page(s) Totally)
<< < 1 2 3 4 5 6 7 > >>
View [10|25|50] records per page

Institution Date Title Author
國立交通大學 2014-12-08T15:26:29Z Dynamics of Laguerre Gaussian TEMo,l* mode in a solid-state laser Lan, YP; Wang, SC; Chen, YF
國立交通大學 2014-12-08T15:26:27Z Micro-photoluminescence from V-shape inverted pyramid in HVPE grown GaN film Lee, CK; Chen, YB; Chang, SC; Pan, CL; Wang, SC
國立交通大學 2014-12-08T15:26:06Z Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:26:02Z MOCVD growth of AlN/GaN DBR structure under various ambient conditions Yao, HH; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:25:59Z Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:25:55Z High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC
國立交通大學 2014-12-08T15:25:53Z Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH
國立交通大學 2014-12-08T15:25:48Z Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process Wang, SC; Hsu, CT; Yeh, CF; Lou, JC
國立交通大學 2014-12-08T15:25:47Z Large emitting area GaN based light emitting diode fabricated on conducting copper substrates Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:47Z InGaN-based light-emitting diode with undercut side wall Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:47Z Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:45Z Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:45Z Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Optically pumped GaN-based vertical cavity surface emitting laser at room temperature Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:25:39Z Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:37Z Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC
國立交通大學 2014-12-08T15:25:37Z The weldability study of stainless steel fabricated by metal injection molding and powder metallurgy for optoelectronic packages Lin, CT; Chiou, BS; Wang, SC; Chi, S
國立交通大學 2014-12-08T15:25:16Z Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP
國立交通大學 2014-12-08T15:25:13Z Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:39Z High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:30Z Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY
國立交通大學 2014-12-08T15:19:28Z Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:24Z Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication of large-area GaN-based light-emitting diodes on Cu substrate Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z 10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:14Z Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:19:13Z Influence of dislocation density on photoluminescence intensity of GaN Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC
國立交通大學 2014-12-08T15:19:04Z Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC
國立交通大學 2014-12-08T15:19:01Z Enhancement in light output of InGaN-based microhole array light-emitting diodes Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:01Z High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC
國立交通大學 2014-12-08T15:18:47Z Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs Liu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL
國立交通大學 2014-12-08T15:18:41Z Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ
國立交通大學 2014-12-08T15:18:38Z Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers Chang, YA; Kuo, HC; Chang, YH; Wang, SC
國立交通大學 2014-12-08T15:18:37Z Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:18:32Z Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:18:22Z Singlemode InAs quantum dot photonic crystal VCSELs Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY
國立交通大學 2014-12-08T15:18:22Z Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:18:19Z Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:18:11Z 1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC
國立交通大學 2014-12-08T15:18:09Z Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:18:07Z Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer Chang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:18:06Z Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:18:00Z Eliminating the interference of ascorbic acid and uric acid to the amperometric glucose biosensor by cation exchangers membrane and size exclusion membrane Yuan, CJ; Hsu, CL; Wang, SC; Chang, KS
國立交通大學 2014-12-08T15:18:00Z Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:17:50Z Pressure and power broadening of the a(10) component of R(56) 32-0 transition of molecular iodine at 532 mn Fang, HM; Wang, SC; Shy, JT
國立交通大學 2014-12-08T15:17:41Z Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers Chang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC

Showing items 161-210 of 322  (7 Page(s) Totally)
<< < 1 2 3 4 5 6 7 > >>
View [10|25|50] records per page