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Showing items 196-220 of 322 (13 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
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Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
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Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
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Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
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Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
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Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:19Z |
Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods
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Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
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Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
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Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:07Z |
Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
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Chang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Eliminating the interference of ascorbic acid and uric acid to the amperometric glucose biosensor by cation exchangers membrane and size exclusion membrane
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Yuan, CJ; Hsu, CL; Wang, SC; Chang, KS |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
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Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Pressure and power broadening of the a(10) component of R(56) 32-0 transition of molecular iodine at 532 mn
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Fang, HM; Wang, SC; Shy, JT |
| 國立交通大學 |
2014-12-08T15:17:41Z |
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
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Chang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
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Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
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Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:29Z |
AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
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Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:23Z |
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
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Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
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Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
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Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
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Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
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Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:02Z |
Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
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Peng, YC; Kao, CC; Huang, HW; Chu, JT; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
Showing items 196-220 of 322 (13 Page(s) Totally)
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