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Showing items 211-220 of 322  (33 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:17:33Z Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF
國立交通大學 2014-12-08T15:17:32Z MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC
國立交通大學 2014-12-08T15:17:29Z AlGaInP light-emitting diodes with stripe patterned omni-directional reflector Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:17:29Z High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:17:23Z Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L
國立交通大學 2014-12-08T15:17:16Z GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:17:16Z Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC
國立交通大學 2014-12-08T15:17:16Z The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF
國立交通大學 2014-12-08T15:17:03Z InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:17:02Z Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors Peng, YC; Kao, CC; Huang, HW; Chu, JT; Lu, TC; Kuo, HC; Wang, SC; Yu, CC

Showing items 211-220 of 322  (33 Page(s) Totally)
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