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显示项目 171-195 / 322 (共13页)
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机构 日期 题名 作者
國立交通大學 2014-12-08T15:25:47Z Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:45Z Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:45Z Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Optically pumped GaN-based vertical cavity surface emitting laser at room temperature Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:39Z Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學 2014-12-08T15:25:39Z Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:25:37Z Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC
國立交通大學 2014-12-08T15:25:37Z The weldability study of stainless steel fabricated by metal injection molding and powder metallurgy for optoelectronic packages Lin, CT; Chiou, BS; Wang, SC; Chi, S
國立交通大學 2014-12-08T15:25:16Z Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP
國立交通大學 2014-12-08T15:25:13Z Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:39Z High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:30Z Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY
國立交通大學 2014-12-08T15:19:28Z Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:24Z Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication of large-area GaN-based light-emitting diodes on Cu substrate Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:23Z 10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC
國立交通大學 2014-12-08T15:19:23Z Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:14Z Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC
國立交通大學 2014-12-08T15:19:13Z Influence of dislocation density on photoluminescence intensity of GaN Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC
國立交通大學 2014-12-08T15:19:04Z Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC
國立交通大學 2014-12-08T15:19:01Z Enhancement in light output of InGaN-based microhole array light-emitting diodes Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC
國立交通大學 2014-12-08T15:19:01Z High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC
國立交通大學 2014-12-08T15:18:47Z Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs Liu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL

显示项目 171-195 / 322 (共13页)
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