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機構	日期	題名	作者
國立交通大學	2014-12-08T15:27:02Z	Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser	Chen, YF; Liao, CC; Lan, YP; Wang, SC
國立交通大學	2014-12-08T15:27:01Z	Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures	Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC
國立交通大學	2014-12-08T15:26:50Z	Efficient all-solid-state deep ultraviolet laser source	Chang, LB; Wang, SC; Kung, AH
國立交通大學	2014-12-08T15:26:44Z	Frequency stabilizations of GaN blue diode laser	Chang, F; Lee, HY; Huang, MS; Wang, SC
國立交通大學	2014-12-08T15:26:29Z	High-power diode-end-pumped passively mode-locked Nd : YVO4 laser with a relaxed saturable Bragg reflector	Tsai, SW; Lan, YP; Wang, SC; Huang, KF; Chen, YF
國立交通大學	2014-12-08T15:26:29Z	Dynamics of Laguerre Gaussian TEMo,l* mode in a solid-state laser	Lan, YP; Wang, SC; Chen, YF
國立交通大學	2014-12-08T15:26:27Z	Micro-photoluminescence from V-shape inverted pyramid in HVPE grown GaN film	Lee, CK; Chen, YB; Chang, SC; Pan, CL; Wang, SC
國立交通大學	2014-12-08T15:26:06Z	Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers	Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC
國立交通大學	2014-12-08T15:26:02Z	MOCVD growth of AlN/GaN DBR structure under various ambient conditions	Yao, HH; Lin, CF; Wang, SC
國立交通大學	2014-12-08T15:25:59Z	Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off	Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC
國立交通大學	2014-12-08T15:25:55Z	High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser	Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC
國立交通大學	2014-12-08T15:25:53Z	Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers	Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH
國立交通大學	2014-12-08T15:25:48Z	Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process	Wang, SC; Hsu, CT; Yeh, CF; Lou, JC
國立交通大學	2014-12-08T15:25:47Z	Large emitting area GaN based light emitting diode fabricated on conducting copper substrates	Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:47Z	InGaN-based light-emitting diode with undercut side wall	Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:47Z	Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask	Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:45Z	Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating	Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:45Z	Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs	Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC
國立交通大學	2014-12-08T15:25:39Z	Optically pumped GaN-based vertical cavity surface emitting laser at room temperature	Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:39Z	An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors	Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:39Z	Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O	Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:39Z	Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate	Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學	2014-12-08T15:25:39Z	Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers	Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:25:37Z	Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB	Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC
國立交通大學	2014-12-08T15:25:37Z	The weldability study of stainless steel fabricated by metal injection molding and powder metallurgy for optoelectronic packages	Lin, CT; Chiou, BS; Wang, SC; Chi, S
國立交通大學	2014-12-08T15:25:16Z	Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication	Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP
國立交通大學	2014-12-08T15:25:13Z	Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off	Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:39Z	High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength	Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC
國立交通大學	2014-12-08T15:19:30Z	Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers	Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY
國立交通大學	2014-12-08T15:19:28Z	Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods	Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:24Z	Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks	Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:23Z	Fabrication of large-area GaN-based light-emitting diodes on Cu substrate	Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:23Z	10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths	Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC
國立交通大學	2014-12-08T15:19:23Z	Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods	Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:14Z	Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface	Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC
國立交通大學	2014-12-08T15:19:13Z	Influence of dislocation density on photoluminescence intensity of GaN	Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC
國立交通大學	2014-12-08T15:19:04Z	Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers	Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC
國立交通大學	2014-12-08T15:19:01Z	Enhancement in light output of InGaN-based microhole array light-emitting diodes	Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:19:01Z	High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer	Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC
國立交通大學	2014-12-08T15:18:47Z	Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs	Liu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL
國立交通大學	2014-12-08T15:18:41Z	Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers	Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ
國立交通大學	2014-12-08T15:18:38Z	Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers	Chang, YA; Kuo, HC; Chang, YH; Wang, SC
國立交通大學	2014-12-08T15:18:37Z	Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector	Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF
國立交通大學	2014-12-08T15:18:32Z	Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface	Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC
國立交通大學	2014-12-08T15:18:22Z	Singlemode InAs quantum dot photonic crystal VCSELs	Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY
國立交通大學	2014-12-08T15:18:22Z	Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates	Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學	2014-12-08T15:18:19Z	Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods	Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC
國立交通大學	2014-12-08T15:18:11Z	1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection	Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC
國立交通大學	2014-12-08T15:18:09Z	Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening	Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ
國立交通大學	2014-12-08T15:18:07Z	Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer	Chang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC

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