|
"wang sc"的相關文件
顯示項目 191-200 / 322 (共33頁)
<< < 15 16 17 18 19 20 21 22 23 24 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:19:13Z |
Influence of dislocation density on photoluminescence intensity of GaN
|
Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
|
Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
|
Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
|
Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:47Z |
Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs
|
Liu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
|
Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
|
Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
|
Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
|
Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
顯示項目 191-200 / 322 (共33頁)
<< < 15 16 17 18 19 20 21 22 23 24 > >>
每頁顯示[10|25|50]項目
|
