| 國家衛生研究院 |
2015-01 |
Change of suicidality among heroin users: 1 month after methadone maintenance treatment
|
Wang, SC;Huang, CL;Wang, NY;Chan, CH;Liu, YL;Chen, CY;Ho, IK |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Broad-band (>= 20 GHz) laser-diode-based optoelectronic microwave phase shifter
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Lin, GR; Hwang, TS; Chuang, YH; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:47:28Z |
A simple passive-alignment packaging technique for laser diode modules
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Wang, SC; Chi, S; Cheng, WH |
| 國立交通大學 |
2014-12-08T15:46:18Z |
Tunable semiconductor laser with liquid crystal pixel mirror in grating-loaded external cavity
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Pan, CL; Tsai, SH; Pan, RP; Sheu, CR; Wang, SC |
| 國立交通大學 |
2014-12-08T15:46:15Z |
Frequency tracking and stabilization of a tunable dual-wavelength external-cavity diode laser
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Hsu, L; Chi, LC; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:46:11Z |
Efficient high-power diode-end-pumped TEM00 Nd : YVO4 laser
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Chen, YF; Huang, TM; Liao, CC; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:45:25Z |
Determination of the Auger upconversion rate in fiber-coupled diode end-pumped Nd : YAG and Nd : YVO4 crystals
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Chen, YF; Liao, CC; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:45:18Z |
Influence of energy-transfer upconversion on the performance of high-power diode-end-pumped CW lasers
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Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:45:04Z |
Repetition-rate dependence of thermal loading in diode-end-pumped Q-switched lasers: influence of energy-transfer upconversion
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Lan, YP; Chen, YF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:45:03Z |
Efficient high-power diode-end-pumped TEM00 Nd : YVO4 laser with a planar cavity
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Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:46Z |
High-power diode-pumped Q-switched and mode-locked Nd : YVO4 laser with a Cr4+: YAG saturable absorber
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Chen, YF; Tsai, SW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:38Z |
Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
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Chu, CF; Yu, CC; Wang, YK; Tsai, JY; Lai, FI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:33Z |
High-power diode-end-pumped Nd : YVO4 laser: thermally induced fracture versus pump-wavelength sensitivity
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Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:18Z |
Generation of Laguerre-Gaussian modes in fiber-coupled laser diode end-pumped lasers
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Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:12Z |
Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
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Lu, TC; Fu, R; Shieh, HM; Huang, KJ; Wang, SC |
| 國立交通大學 |
2014-12-08T15:44:11Z |
Diode-end-pumped passively mode-locked high-power Nd : YVO4 laser with a relaxed saturable Bragg reflector
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Chen, YF; Tsai, SW; Lan, YP; Wang, SC; Huang, KF |
| 國立交通大學 |
2014-12-08T15:44:06Z |
High-power diode-pumped nonlinear mirror mode-locked Nd : YVO4 laser with periodically-poled KTP
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Chen, YF; Tsai, SW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:53Z |
Beryllium-implanted P-type GaN with high carrier concentration
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
High etching rate of GaN films by KrF excimer laser
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Chu, CF; Lee, CK; Yu, CC; Wang, YK; Tasi, JY; Yang, CR; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
Investigation of beryllium implanted P-type GaN
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Yu, CC; Chu, CF; Tsai, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:34Z |
A diode-pumped high power Q-switched and self-mode-locked Nd : YVO4 laser with a LiF : F-2(-) saturable absorber
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Chen, YF; Tsai, SW; Wang, SC; Chen, J |
| 國立交通大學 |
2014-12-08T15:43:12Z |
Simultaneous mode locking in a diode-pumped passively Q-switched Nd : YVO4 laser with a GaAs saturable absorber
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Chen, YF; Huang, KF; Tsai, SW; Lan, YP; Wang, SC; Chen, J |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Simultaneous observation of second-harmonic emission and three-photon excited photoluminescence from hybrid vapor phase epitaxy-grown GaN film
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Lee, CK; Kao, FJ; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:42:38Z |
Real index-guided InGaAlP red lasers with buried tunnel junctions
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Lu, TC; Shieh, HM; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Comparison of high-resistivity ZnO films sputtered on different substrates
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Lin, GR; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:22Z |
Synthesis of bulk beta-FeSi2 crystal
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Hsu, YK; Wang, JJ; Chang, CS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Modeling of diode-end-pumped Q-switched solid-state lasers: influence of energy-transfer upconversion
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Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:07Z |
Difference-frequency mixing of output waves from a periodically poled lithium niobate optical parametric oscillator in a GaSe crystal
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Haidar, S; Hsu, YK; Chang, CS; Wang, SC; Ito, H |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
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Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Efficient compact watt-level deep-ultraviolet laser generated from a multi-kHz Q-switched diode-pumped solid-state laser system
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Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Electrical and optical properties of beryllium-implanted Mg-doped GaN
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:50Z |
Efficient generation of continuous-wave yellow light by single-pass sum-frequency mixing of a diode-pumped Nd : YVO4 dual-wavelength laser with periodically poled lithium niobate
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Chen, YF; Tsai, SW; Wang, SC; Huang, YC; Lin, TC; Wong, BC |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
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Chu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures
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Chen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:09Z |
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
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Lu, TC; Tsai, JY; Chu, JT; Chang, YS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Numerical analysis of fifth-harmonic conversion of low-power pulsed Nd : YAG laser with resonance of second harmonic
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Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:40:38Z |
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
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Kuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:19Z |
Diode-pumped passively mode-locked multiwatt Nd : GdVO4 laser with a saturable Bragg reflector
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He, JL; Lee, CK; Huang, JYJ; Wang, SC; Pan, CL; Huang, KF |
| 國立交通大學 |
2014-12-08T15:40:19Z |
Device transfer technology by backside etching (DTBE) for poly-Si thin-film transistors on glass/plastic substrate
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Wang, SC; Yeh, CF; Huang, CK; Dai, YT |
| 國立交通大學 |
2014-12-08T15:40:18Z |
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
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Lai, FI; Hsueh, TH; Chang, YH; Shu, WC; Lai, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:15Z |
High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
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Tsai, JY; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:12Z |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
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Hsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
|
Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
|
Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:41Z |
Numerical study of multiple-pass effect by total internal reflection on second-harmonic conversion in KBe2BO3F2 crystal
|
Chang, LB; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
|
Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:35Z |
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
|
Lu, TC; Tsai, JY; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:31Z |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
|
Kuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
|
Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
|
Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
