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Showing items 111-160 of 322 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:42:22Z |
Synthesis of bulk beta-FeSi2 crystal
|
Hsu, YK; Wang, JJ; Chang, CS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Modeling of diode-end-pumped Q-switched solid-state lasers: influence of energy-transfer upconversion
|
Chen, YF; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:07Z |
Difference-frequency mixing of output waves from a periodically poled lithium niobate optical parametric oscillator in a GaSe crystal
|
Haidar, S; Hsu, YK; Chang, CS; Wang, SC; Ito, H |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
|
Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Efficient compact watt-level deep-ultraviolet laser generated from a multi-kHz Q-switched diode-pumped solid-state laser system
|
Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Electrical and optical properties of beryllium-implanted Mg-doped GaN
|
Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:50Z |
Efficient generation of continuous-wave yellow light by single-pass sum-frequency mixing of a diode-pumped Nd : YVO4 dual-wavelength laser with periodically poled lithium niobate
|
Chen, YF; Tsai, SW; Wang, SC; Huang, YC; Lin, TC; Wong, BC |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
|
Chu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures
|
Chen, CC; Hsueh, TH; Ting, YS; Chi, GC; Chang, CA; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:09Z |
InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition
|
Lu, TC; Tsai, JY; Chu, JT; Chang, YS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Numerical analysis of fifth-harmonic conversion of low-power pulsed Nd : YAG laser with resonance of second harmonic
|
Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:40:38Z |
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
|
Kuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:19Z |
Diode-pumped passively mode-locked multiwatt Nd : GdVO4 laser with a saturable Bragg reflector
|
He, JL; Lee, CK; Huang, JYJ; Wang, SC; Pan, CL; Huang, KF |
| 國立交通大學 |
2014-12-08T15:40:19Z |
Device transfer technology by backside etching (DTBE) for poly-Si thin-film transistors on glass/plastic substrate
|
Wang, SC; Yeh, CF; Huang, CK; Dai, YT |
| 國立交通大學 |
2014-12-08T15:40:18Z |
Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
|
Lai, FI; Hsueh, TH; Chang, YH; Shu, WC; Lai, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:15Z |
High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
|
Tsai, JY; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:12Z |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
|
Hsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength
|
Kuo, HC; Chang, YS; Lin, CF; Lu, TC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
|
Lin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:41Z |
Numerical study of multiple-pass effect by total internal reflection on second-harmonic conversion in KBe2BO3F2 crystal
|
Chang, LB; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:36Z |
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
|
Yao, HH; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:35Z |
Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition
|
Lu, TC; Tsai, JY; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:31Z |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
|
Kuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
|
Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
|
Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:24Z |
Purification of multi-walled carbon nanotubes by microwave digestion method
|
Chen, CM; Chen, M; Leu, FC; Hsu, SY; Wang, SC; Shi, SC; Chen, CF |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Study of GaN light-emitting diodes fabricated by laser lift-off technique
|
Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:09Z |
As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
|
Laih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:53Z |
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
|
Chang, YH; Lai, FI; Lu, CY; Kuo, HC; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:47Z |
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
|
Lai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
|
Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
|
Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:22Z |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
|
Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
|
Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:11Z |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
|
Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
|
Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Fabricating thin-film transistors on plastic substrates using spin etching and device transfer
|
Wang, SC; Yeh, CF; Hsu, CT; Lou, JC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
|
Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:02Z |
Process improvement and reliability characteristics of spin-on poly-3-hexylthiophene thin-film transistor
|
Wang, SC; Lou, JC; Liou, BL; Lin, RX; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
|
Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:36:25Z |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
|
Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:12Z |
Evaluation of hot workability of H13 through processing map
|
Wang, SC; Chou, CP; Lin, CH; Chang, CC |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy
|
Fang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:06Z |
Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride
|
Lee, CK; Kao, FJ; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser
|
Chen, YF; Liao, CC; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures
|
Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:50Z |
Efficient all-solid-state deep ultraviolet laser source
|
Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:26:44Z |
Frequency stabilizations of GaN blue diode laser
|
Chang, F; Lee, HY; Huang, MS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:29Z |
High-power diode-end-pumped passively mode-locked Nd : YVO4 laser with a relaxed saturable Bragg reflector
|
Tsai, SW; Lan, YP; Wang, SC; Huang, KF; Chen, YF |
Showing items 111-160 of 322 (7 Page(s) Totally)
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