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Showing items 141-190 of 322 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
|
Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:37:26Z |
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
|
Huang, HW; Kao, CC; Hsueh, TH; Yu, CC; Lin, CF; Chu, JT; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:22Z |
Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
|
Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
|
Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:11Z |
Spectrally resolved spontaneous emission patterns of oxide-confined vertical-cavity surface-emitting lasers
|
Lu, TC; Hsu, WC; Chang, YS; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:10Z |
MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission
|
Kuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Fabricating thin-film transistors on plastic substrates using spin etching and device transfer
|
Wang, SC; Yeh, CF; Hsu, CT; Lou, JC |
| 國立交通大學 |
2014-12-08T15:37:05Z |
Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
|
Kuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:02Z |
Process improvement and reliability characteristics of spin-on poly-3-hexylthiophene thin-film transistor
|
Wang, SC; Lou, JC; Liou, BL; Lin, RX; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
|
Kao, CC; Kuo, HC; Huang, HW; Chu, JT; Peng, YC; Hsieh, YL; Luo, CY; Wang, SC; Yu, CC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:36:25Z |
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
|
Chang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:12Z |
Evaluation of hot workability of H13 through processing map
|
Wang, SC; Chou, CP; Lin, CH; Chang, CC |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Atomic force microscope study of GaN films grown by hydride vapor phase epitaxy
|
Fang, HM; Wang, YK; Tsai, RY; Chu, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:06Z |
Observation of second harmonic emission and three-photon fluorescence from Gallium-Nitride
|
Lee, CK; Kao, FJ; Wang, SC; Pan, CL |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser
|
Chen, YF; Liao, CC; Lan, YP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:27:01Z |
Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures
|
Lin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:50Z |
Efficient all-solid-state deep ultraviolet laser source
|
Chang, LB; Wang, SC; Kung, AH |
| 國立交通大學 |
2014-12-08T15:26:44Z |
Frequency stabilizations of GaN blue diode laser
|
Chang, F; Lee, HY; Huang, MS; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:29Z |
High-power diode-end-pumped passively mode-locked Nd : YVO4 laser with a relaxed saturable Bragg reflector
|
Tsai, SW; Lan, YP; Wang, SC; Huang, KF; Chen, YF |
| 國立交通大學 |
2014-12-08T15:26:29Z |
Dynamics of Laguerre Gaussian TEMo,l* mode in a solid-state laser
|
Lan, YP; Wang, SC; Chen, YF |
| 國立交通大學 |
2014-12-08T15:26:27Z |
Micro-photoluminescence from V-shape inverted pyramid in HVPE grown GaN film
|
Lee, CK; Chen, YB; Chang, SC; Pan, CL; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:06Z |
Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers
|
Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:02Z |
MOCVD growth of AlN/GaN DBR structure under various ambient conditions
|
Yao, HH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:59Z |
Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
|
Chu, JT; Kuo, HC; Kao, CC; Huang, HW; Chu, CF; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser
|
Kuo, HC; Chang, YH; Lai, FI; Lee, PT; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:48Z |
Fabrication of thin-film transistors on plastic substrates by spin etching and device transfer process
|
Wang, SC; Hsu, CT; Yeh, CF; Lou, JC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
|
Chu, JT; Liang, WD; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
InGaN-based light-emitting diode with undercut side wall
|
Kao, CC; Chu, JT; Huang, HW; Peng, YC; Yu, CC; Hseih, YL; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
|
Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
|
Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
|
Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
|
Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
|
Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O
|
Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate
|
Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
|
Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:37Z |
Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB
|
Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:37Z |
The weldability study of stainless steel fabricated by metal injection molding and powder metallurgy for optoelectronic packages
|
Lin, CT; Chiou, BS; Wang, SC; Chi, S |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
|
Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:25:13Z |
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
|
Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
|
Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
|
Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:28Z |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
|
Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:24Z |
Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
|
Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
|
Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
|
Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
|
Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:14Z |
Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
|
Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC |
Showing items 141-190 of 322 (7 Page(s) Totally)
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