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Showing items 171-220 of 322 (7 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:47Z |
Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask
|
Huang, HW; Hsueh, TH; Kao, CC; Chang, YH; Ou-Yang, M; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
|
Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
|
Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Optically pumped GaN-based vertical cavity surface emitting laser at room temperature
|
Chu, JT; Liang, WD; Kao, CC; Huang, HW; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AIN/GaN and Ta2O5/NO2 distributed bragg reflectors
|
Kao, CC; Yao, HH; Peng, YC; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Enhancement of light-output of GaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation of p-GaN in H2O
|
Lai, FI; Chen, WY; Kao, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate
|
Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
|
Lai, FI; Chang, YH; Yang, HP; Yu, HC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:37Z |
Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB
|
Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:37Z |
The weldability study of stainless steel fabricated by metal injection molding and powder metallurgy for optoelectronic packages
|
Lin, CT; Chiou, BS; Wang, SC; Chi, S |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
|
Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:25:13Z |
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
|
Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
|
Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
|
Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:28Z |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
|
Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:24Z |
Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
|
Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
|
Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
|
Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
|
Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:14Z |
Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
|
Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:19:13Z |
Influence of dislocation density on photoluminescence intensity of GaN
|
Falth, JF; Gurusinghe, MN; Liu, XY; Andersson, TG; Ivanov, IG; Monemar, B; Yao, HH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
|
Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
|
Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
|
Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:47Z |
Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs
|
Liu, TA; Lin, GR; Lee, YC; Wang, SC; Tani, M; Wu, HH; Pan, CL |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
|
Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
|
Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
|
Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
|
Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Singlemode InAs quantum dot photonic crystal VCSELs
|
Yang, HPD; Chang, YH; Lai, FI; Yu, HC; Hsu, YJ; Lin, G; Hsiao, RS; Kuo, HC; Wang, SC; Chi, JY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates
|
Lee, YJ; Hsu, TC; Kuo, HC; Wang, SC; Yang, YL; Yen, SN; Chu, YT; Shen, YJ; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:19Z |
Fabrication and characterization of In(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods
|
Hsueh, TH; Sheu, JK; Huang, HW; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:11Z |
1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
|
Peng, PC; Chang, YH; Kuo, HC; Tsai, WK; Lin, G; Lin, CT; Yu, HC; Yang, HP; Hsiao, RS; Lin, KF; Chi, JY; Chi, S; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:09Z |
Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening
|
Lee, YJ; Kuo, HC; Wang, SC; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:18:07Z |
Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
|
Chang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:06Z |
Effects of different n-electrode patterns on optical characteristics of large-area p-side-down InGaN light-emitting diodes fabricated by laser lift-off
|
Chu, JT; Kao, CC; Huang, HW; Liang, WD; Chu, CF; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Eliminating the interference of ascorbic acid and uric acid to the amperometric glucose biosensor by cation exchangers membrane and size exclusion membrane
|
Yuan, CJ; Hsu, CL; Wang, SC; Chang, KS |
| 國立交通大學 |
2014-12-08T15:18:00Z |
Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy
|
Lee, YJ; Tseng, HC; Kuo, HC; Wang, SC; Chang, CW; Hsu, TC; Yang, YL; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:50Z |
Pressure and power broadening of the a(10) component of R(56) 32-0 transition of molecular iodine at 532 mn
|
Fang, HM; Wang, SC; Shy, JT |
| 國立交通大學 |
2014-12-08T15:17:41Z |
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
|
Chang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:33Z |
Effects of doping concentration and annealing temperature on properties of highly-oriented al-doped ZnO films
|
Kuo, SY; Chen, WC; Lai, FI; Cheng, CP; Kuo, HC; Wang, SC; Hsieh, WF |
| 國立交通大學 |
2014-12-08T15:17:32Z |
MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
|
Chang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:29Z |
AlGaInP light-emitting diodes with stripe patterned omni-directional reflector
|
Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector
|
Lee, YJ; Lu, TC; Kuo, HC; Wang, SC; Liou, MJ; Chang, CW; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ |
| 國立交通大學 |
2014-12-08T15:17:23Z |
Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition
|
Huang, GS; Lu, TC; Yao, HH; Kuo, HC; Wang, SC; Lin, CW; Chang, L |
| 國立交通大學 |
2014-12-08T15:17:16Z |
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
|
Lee, YJ; Hwang, JM; Hsu, TC; Hsieh, MH; Jou, MJ; Lee, BJ; Lu, TC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
|
Chang, YH; Peng, PC; Tsai, WK; Lin, G; Lai, F; Hsiao, RS; Yang, HP; Yu, HC; Lin, KF; Chi, JY; Wang, SC; Kuo, HC |
| 國立交通大學 |
2014-12-08T15:17:16Z |
The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
|
Kao, CC; Lu, TC; Huang, HW; Chu, JT; Peng, YC; Yao, HH; Tsai, JY; Kao, TT; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:17:03Z |
InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption
|
Yao, HH; Lu, TC; Huang, GS; Chen, CY; Liang, WD; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:17:02Z |
Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed Bragg reflectors
|
Peng, YC; Kao, CC; Huang, HW; Chu, JT; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
Showing items 171-220 of 322 (7 Page(s) Totally)
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