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"wang sheng yu"的相关文件
显示项目 1-10 / 23 (共3页)
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| 國立交通大學 |
2019-04-02T06:00:26Z |
Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer
|
Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T06:00:07Z |
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
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Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang |
| 國立交通大學 |
2019-04-02T05:59:41Z |
Multilevel resistive switching in Ti/CuxO/Pt memory devices
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Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application
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Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:26Z |
Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films
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Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen |
| 國立臺中教育大學 |
2016-07-21 |
少年維特養成計畫─王勝右藝術創作
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王勝右; Wang, Sheng-yu |
| 國立交通大學 |
2014-12-16T06:15:24Z |
METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY
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TSENG Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han |
| 國立交通大學 |
2014-12-16T06:14:01Z |
Method for fabricating a resistor for a resistance random access memory
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Tseng Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han |
| 國立交通大學 |
2014-12-12T01:24:37Z |
二元金屬氧化物應用於電阻式記憶體之界面特性研究
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王聖裕; Wang, Sheng-Yu; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:44:21Z |
Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application
|
Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen |
显示项目 1-10 / 23 (共3页)
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