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Institution Date Title Author
國立交通大學 2019-04-02T06:00:26Z Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer Wang, Sheng-Yu; Lee, Dai-Ying; Huang, Tai-Yuen; Wu, Jia-Woei; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T06:00:07Z Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films Wang, Sheng-Yu; Lee, Dai-Ying; Tseng, Tseung-Yuen; Lin, Chih-Yang
國立交通大學 2019-04-02T05:59:41Z Multilevel resistive switching in Ti/CuxO/Pt memory devices Wang, Sheng-Yu; Huang, Chin-Wen; Lee, Dai-Ying; Tseng, Tseung-Yuen; Chang, Ting-Chang
國立交通大學 2019-04-02T05:58:59Z Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen
國立交通大學 2019-04-02T05:58:26Z Ti-Induced Recovery Phenomenon of Resistive Switching in ZrO2 Thin Films Lee, Dai-Ying; Wang, Sheng-Yu; Tseng, Tseung-Yuen
國立臺中教育大學 2016-07-21 少年維特養成計畫─王勝右藝術創作 王勝右; Wang, Sheng-yu
國立交通大學 2014-12-16T06:15:24Z METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY TSENG Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han
國立交通大學 2014-12-16T06:14:01Z Method for fabricating a resistor for a resistance random access memory Tseng Tseung-Yuen; Wang Sheng-Yu; Tsai Chen-Han
國立交通大學 2014-12-12T01:24:37Z 二元金屬氧化物應用於電阻式記憶體之界面特性研究 王聖裕; Wang, Sheng-Yu; 曾俊元; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:44:21Z Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application Wang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen

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