|
"wang shui jinn"的相关文件
显示项目 51-75 / 98 (共4页)
<< < 1 2 3 4 > >>
每页显示[10|25|50]项目
| 國立成功大學 |
2011-01 |
Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium-Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate
|
Kuo, Der-Ming; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Tron-Min; Lee, Wei-Chi; Wang, Pei-Ren |
| 國立成功大學 |
2011 |
From metastable to stable: possible mechanisms for the evolution of W(18)O(49) nanostructures
|
Ko, Rong-Ming; Wang, Shui-Jinn; Hsu, Wei-Chou; Lin, Yan-Ru |
| 國立成功大學 |
2011 |
Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughened by SiO(2) Nanotube Arrays
|
Kuo, Der-Ming; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Tron-Min; Lee, Wei-Chi; Wang, Pei-Ren |
| 國立成功大學 |
2010 |
A Low Operating Voltage ZnO Thin Film Transistor Using a High-kappa HfLaO Gate Dielectric
|
Su, N. C.; Wang, Shui-Jinn; Chin, Albert |
| 國立成功大學 |
2009-12 |
High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
|
Su, N. C.; Wang, Shui-Jinn; Chin, Albert |
| 國立成功大學 |
2009-10 |
Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
|
Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Tron-Min; Lee, Wei-Chi; Chen, Shiue-Lung; Wang, Yu-Yu; Kuan, Hon |
| 國立成功大學 |
2009-07 |
Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
|
Chin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, Chi-Chang; Li, M. F.; Su, N. C.; Wang, Shui-Jinn |
| 國立成功大學 |
2009-03 |
Preparation of vertically-aligned nickel nanowires with anodic aluminum oxide templates and their application as field emitters
|
Tsai, Wei-Chih; Wang, Shui-Jinn; Lin, Jun-Ku; Chang, Chia-Lung; Ko, Rong-Ming |
| 國立成功大學 |
2009-01 |
White-light emissions from p-type porous silicon layers by high-temperature thermal annealing
|
Tsai, W. C.; Lin, J. C.; Huang, K. M.; Yang, Ru-Yuan; Wang, Shui-Jinn |
| 國立成功大學 |
2009 |
The evolution of tungsten oxide nanostructures from nanowires to nanosheets
|
Ko, Rong-Ming; Wang, Shui-Jinn; Tsai, Wei-Chih; Liou, Bor-Wen; Lin, Yan-Ru |
| 國立成功大學 |
2008-10 |
Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatment
|
Tsai, W. C.; Wang, Shui-Jinn; Chang, C. L.; Chen, C. H.; Ko, R. M.; Liou, B. W. |
| 國立成功大學 |
2008-05 |
Current spreading and blocking designs for improving light output power from the vertical-structured GaN-based light-emitting diodes
|
Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Kuo, Hon-Yi; Tsai, Ching-Chung; Lee, Wei-Chi; Kuan, Hon |
| 國立成功大學 |
2008-05 |
Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate (vol 20, pg 523, 2008)
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Chen, Shiue-Lung; Lee, Wei-Chi; Hsu, Hong-Kuei; Chou, Jui-Chiang; Wu, Chung-Han |
| 國立成功大學 |
2008-04 |
Development of gas sensors based on tungsten oxide nanowires in metal/SiO2/metal structure and their sensing responses to NO2
|
Ko, Rong-Ming; Wang, Shui-Jinn; Wen, Zhi-Fu; Lin, Jun-Ku; Fan, Ga-Hong; Shu, Wen-I; Liou, Bor-Wen |
| 國立成功大學 |
2008-03 |
Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Chen, Shiue-Lung; Lee, Wei-Chi; Hsu, Hong-Kuei; Chou, Jui-Chiang; Wu, Chung-Han |
| 國立成功大學 |
2008-03 |
High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction
|
Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, Sean P.; Chin, Albert |
| 國立成功大學 |
2008-01-14 |
A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Kuan, Hon |
| 國立成功大學 |
2007-12 |
HtLaON n-MOSFETs using a low work function HfSix gate
|
Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2007-03 |
Impact of high-k offset spacer in 65-nm node SOI devices
|
Ma, Ming-Wen; Wu, Chien-Hung; Yang, Tsung-Yu; Kao, Kuo-Hsing; Wu, Woei-Cherng; Wang, Shui-Jinn; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立成功大學 |
2007-03 |
Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques
|
Chen, Shiue-Lung; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Tron-Min; Lee, Wei-Chi; Liou, Bor-Wen |
| 國立成功大學 |
2007-01-22 |
Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
|
Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Shiue-Lung; Tsai, Wei-Chih; Lee, Wei-Chi; Tsai, Ching-Chung |
| 國立成功大學 |
2006-10 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
|
Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
|
Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
|
Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
A vertical-structured Ni/GaN Schottky barrier diode using electroplating nickel substrate
|
Wang, Shui-Jinn; Chen, Tron-Min; Uang, Kai-Ming; Chen, Shiue-Lung; Hsla, Tung-Sheng; Chang, Shu-Cheng; Ku, Hon-Yi; Liou, Bor-Wen |
显示项目 51-75 / 98 (共4页)
<< < 1 2 3 4 > >>
每页显示[10|25|50]项目
|
