|
"wang shui jinn"的相关文件
显示项目 61-85 / 98 (共4页)
<< < 1 2 3 4 > >>
每页显示[10|25|50]项目
| 國立成功大學 |
2008-10 |
Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatment
|
Tsai, W. C.; Wang, Shui-Jinn; Chang, C. L.; Chen, C. H.; Ko, R. M.; Liou, B. W. |
| 國立成功大學 |
2008-05 |
Current spreading and blocking designs for improving light output power from the vertical-structured GaN-based light-emitting diodes
|
Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Kuo, Hon-Yi; Tsai, Ching-Chung; Lee, Wei-Chi; Kuan, Hon |
| 國立成功大學 |
2008-05 |
Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate (vol 20, pg 523, 2008)
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Chen, Shiue-Lung; Lee, Wei-Chi; Hsu, Hong-Kuei; Chou, Jui-Chiang; Wu, Chung-Han |
| 國立成功大學 |
2008-04 |
Development of gas sensors based on tungsten oxide nanowires in metal/SiO2/metal structure and their sensing responses to NO2
|
Ko, Rong-Ming; Wang, Shui-Jinn; Wen, Zhi-Fu; Lin, Jun-Ku; Fan, Ga-Hong; Shu, Wen-I; Liou, Bor-Wen |
| 國立成功大學 |
2008-03 |
Use of elastic conductive adhesive as the bonding agent for the fabrication of vertical structure GaN-based LEDs on flexible metal substrate
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Chen, Shiue-Lung; Lee, Wei-Chi; Hsu, Hong-Kuei; Chou, Jui-Chiang; Wu, Chung-Han |
| 國立成功大學 |
2008-03 |
High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction
|
Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, Sean P.; Chin, Albert |
| 國立成功大學 |
2008-01-14 |
A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes
|
Kuo, Hon-Yi; Wang, Shui-Jinn; Wang, Pei-Ren; Uang, Kai-Ming; Chen, Tron-Min; Kuan, Hon |
| 國立成功大學 |
2007-12 |
HtLaON n-MOSFETs using a low work function HfSix gate
|
Cheng, C. F.; Wu, C. H.; Su, N. C.; Wang, Shui-Jinn; McAlister, S. P.; Chin, Albert |
| 國立成功大學 |
2007-03 |
Impact of high-k offset spacer in 65-nm node SOI devices
|
Ma, Ming-Wen; Wu, Chien-Hung; Yang, Tsung-Yu; Kao, Kuo-Hsing; Wu, Woei-Cherng; Wang, Shui-Jinn; Chao, Tien-Sheng; Lei, Tan-Fu |
| 國立成功大學 |
2007-03 |
Fabrication of dicing-free vertical-structured high-power GaN-based light-emitting diodes with selective nickel electroplating and patterned laser liftoff techniques
|
Chen, Shiue-Lung; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Tron-Min; Lee, Wei-Chi; Liou, Bor-Wen |
| 國立成功大學 |
2007-01-22 |
Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
|
Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Shiue-Lung; Tsai, Wei-Chih; Lee, Wei-Chi; Tsai, Ching-Chung |
| 國立成功大學 |
2006-10 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
|
Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
|
Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
|
Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
A vertical-structured Ni/GaN Schottky barrier diode using electroplating nickel substrate
|
Wang, Shui-Jinn; Chen, Tron-Min; Uang, Kai-Ming; Chen, Shiue-Lung; Hsla, Tung-Sheng; Chang, Shu-Cheng; Ku, Hon-Yi; Liou, Bor-Wen |
| 國立成功大學 |
2006-05 |
The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes
|
Wang, Shui-Jinn; Chen, Shiue-Lung; Uang, Kai-Ming; Lee, Wei-Chi; Chen, Tron-Min; Chen, Chao-Hsuing; Liou, Bor-Wen |
| 國立成功大學 |
2006-04 |
Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
|
Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Yang, Yu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-02 |
High work function IrxSi gates on HfAlON p-MOSFETs
|
Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P. |
| 國立成功大學 |
2006-01-14 |
The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films
|
Chen, Chao-Hsuing; Wang, Shui-Jinn; Ko, Rong-Ming; Kuo, Yi-Cheng; Uang, Kai-Ming; Chen, Tron-Min; Liou, Bor-Wen; Tsai, Hao-Yi |
| 國立成功大學 |
2006 |
A quantum trap MONOS memory device using AlN
|
Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, Shui-Jinn; McAlister, S. P. |
| 國立成功大學 |
2005-12 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
|
Chang, Shu-Cheng; Wang, Shui-Jinn; Uang, Kai-Ming; Liou, Bor-Wen |
| 國立成功大學 |
2005-11 |
Light-emitting diodes with nickel substrates fabricated by electroplating
|
Chang, P. H.; Chen, N. C.; Wang, Y. N.; Shih, C. F.; Wu, M. H .; Yang, T. H .; Tzou, Y. H.; Wang, Shui-Jinn |
| 國立成功大學 |
2005-06-27 |
Preparation of tungsten oxide nanowires from sputter-deposited WCx films using an annealing/oxidation process
|
Wang, Shui-Jinn; Chen, Chao-Hsuing; Ko, R. M.; Kuo, Yeong-Chau; Wong, C. H.; Wu, C. H.; Uang, K. M.; Chen, T. M.; Liou, B. W. |
| 國立成功大學 |
2005-05 |
Hydrogen and oxygen plasma effects on undoped and n-p compensation-doped single- and multilayer polycrystalline silicon resistor films
|
Liou, Bor-Wen; Chang, Shu-Cheng; Wang, Shui-Jinn |
| 國立成功大學 |
2005-04 |
High-power GaN-based light-emitting diodes with transparent indium zinc oxide films
|
Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Wu, Chin-Kun; Chang, Shu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
显示项目 61-85 / 98 (共4页)
<< < 1 2 3 4 > >>
每页显示[10|25|50]项目
|
