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"wang shui jinn"的相關文件
顯示項目 71-95 / 98 (共4頁)
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| 國立成功大學 |
2007-01-22 |
Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
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Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Shiue-Lung; Tsai, Wei-Chih; Lee, Wei-Chi; Tsai, Ching-Chung |
| 國立成功大學 |
2006-10 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
A vertical-structured Ni/GaN Schottky barrier diode using electroplating nickel substrate
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Wang, Shui-Jinn; Chen, Tron-Min; Uang, Kai-Ming; Chen, Shiue-Lung; Hsla, Tung-Sheng; Chang, Shu-Cheng; Ku, Hon-Yi; Liou, Bor-Wen |
| 國立成功大學 |
2006-05 |
The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes
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Wang, Shui-Jinn; Chen, Shiue-Lung; Uang, Kai-Ming; Lee, Wei-Chi; Chen, Tron-Min; Chen, Chao-Hsuing; Liou, Bor-Wen |
| 國立成功大學 |
2006-04 |
Effect of surface treatment on the performance of vertical-structure GaN-based high-power light-emitting diodes with electroplated metallic substrates
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Yang, Yu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2006-02 |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P. |
| 國立成功大學 |
2006-01-14 |
The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films
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Chen, Chao-Hsuing; Wang, Shui-Jinn; Ko, Rong-Ming; Kuo, Yi-Cheng; Uang, Kai-Ming; Chen, Tron-Min; Liou, Bor-Wen; Tsai, Hao-Yi |
| 國立成功大學 |
2006 |
A quantum trap MONOS memory device using AlN
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Lai, C. H.; Wu, C. H.; Chin, Albert; Wang, Shui-Jinn; McAlister, S. P. |
| 國立成功大學 |
2005-12 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
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Chang, Shu-Cheng; Wang, Shui-Jinn; Uang, Kai-Ming; Liou, Bor-Wen |
| 國立成功大學 |
2005-11 |
Light-emitting diodes with nickel substrates fabricated by electroplating
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Chang, P. H.; Chen, N. C.; Wang, Y. N.; Shih, C. F.; Wu, M. H .; Yang, T. H .; Tzou, Y. H.; Wang, Shui-Jinn |
| 國立成功大學 |
2005-06-27 |
Preparation of tungsten oxide nanowires from sputter-deposited WCx films using an annealing/oxidation process
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Wang, Shui-Jinn; Chen, Chao-Hsuing; Ko, R. M.; Kuo, Yeong-Chau; Wong, C. H.; Wu, C. H.; Uang, K. M.; Chen, T. M.; Liou, B. W. |
| 國立成功大學 |
2005-05 |
Hydrogen and oxygen plasma effects on undoped and n-p compensation-doped single- and multilayer polycrystalline silicon resistor films
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Liou, Bor-Wen; Chang, Shu-Cheng; Wang, Shui-Jinn |
| 國立成功大學 |
2005-04 |
High-power GaN-based light-emitting diodes with transparent indium zinc oxide films
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Uang, Kai-Ming; Wang, Shui-Jinn; Chen, Shiue-Lung; Wu, Chin-Kun; Chang, Shu-Cheng; Chen, Tron-Min; Liou, Bor-Wen |
| 國立成功大學 |
2005-03 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
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Chang, Shu-Cheng; Wang, Shui-Jinn; Uang, Kai-Ming; Liou, Bor-Wen |
| 國立成功大學 |
2005-02-14 |
Micro-structures of BF2+- and As+-implanted polycrystalline silicon thin films of various thicknesses and heat treatments
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Liou, Bor-Wen; Chang, Shu-Cheng; Wang, Shui-Jinn |
| 國立成功大學 |
2005-02 |
On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires from WCx films
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Wang, Shui-Jinn; Chen, Chao-Hsuing; Chang, Shu-Cheng; Wong, Chin-Hong; Uang, Kai-Ming; Chen, Tron-Min; Ko, Rong-Ming; Liou, Bor-Wien |
| 國立成功大學 |
2005 |
High power silicon Schottky barrier diodes with different edge termination structures
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Liou, Bor-Wen; Chen, Tron-Min; Chen, Chih-Wei; Uang, Kai-Ming; Wang, Shui-Jinn |
| 國立成功大學 |
2004-09-20 |
Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films
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Wang, Shui-Jinn; Chen, Chao-Hsuing; Chang, Shu-Cheng; Uang, Kai-Ming; Juan, Chuan-Ping; Cheng, Huang-Chung |
| 國立成功大學 |
2002-04 |
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
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Lee, William J.; Fang, Yean-Kuen; Ho, Jyh-Jier; Chen, Chin-Ying; Chiou, L. H.; Wang, Shui-Jinn; Dai, F; Hsieh, T; Tsai, Rung-Ywan; Huang, Daoyang; Ho, Fang C. |
| 國立成功大學 |
2001-11 |
Influence of nitrogen doping on the barrier properties of sputtered tantalum carbide films for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung; Shiao, Ming-Hua |
| 國立成功大學 |
2001-09 |
Thermal stability of sputtered tungsten carbide as diffusion barrier for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung; Shiao, M. H. |
| 國立成功大學 |
2001-08-15 |
A comparative study of sputtered TaCx and WCx films as diffusion barriers between Cu and Si
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung |
| 國立成功大學 |
2001-08 |
Characterization of sputtered titanium carbide film as diffusion barrier for copper metallization
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Wang, Shui-Jinn; Tsai, Hao-Yi; Sun, Shi-Chung |
顯示項目 71-95 / 98 (共4頁)
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