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Showing items 11-18 of 18 (2 Page(s) Totally)
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| 國立東華大學 |
2006 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C. |
| 國立東華大學 |
2006 |
InP-based double heterojunction bipolar transistor with emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J. |
| 國立東華大學 |
2005-08 |
Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor
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Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H. |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
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Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立東華大學 |
2005 |
Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel
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Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J. |
| 國立東華大學 |
2005 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As/In0.65Ga0.35As metamorphic HEMT
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Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J. |
| 國立東華大學 |
2005 |
Improved InP/InGaAs double heterojunction bipolar transistor
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Lin,Y. S.; Hsu,W. C.; Chen,Y. J.; Huang,D. H.; Wang, T. B.; Huang,J. H. |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
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Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
Showing items 11-18 of 18 (2 Page(s) Totally)
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