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Taiwan Academic Institutional Repository >
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"wang tahui"
Showing items 1-25 of 122 (5 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:01:09Z |
Design Space Analysis for Cross-Point 1S1MTJ MRAM: Selector-MTJ Cooptimization
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Chiang, Hung-Li; Chen, Tzu-Chiang; Song, Ming-Yuan; Chen, Yu-Sheng; Chiu, Jung-Piao; Chiang, Katherine; Manfrini, Mauricio; Cai, Jin; Gallagher, William J.; Wang, Tahui; Diaz, Carlos H.; Wong, H. -S. Philip |
| 國立交通大學 |
2020-02-02T23:54:29Z |
Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device
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Su, Po-Cheng; Jiang, Cheng-Min; Chen, Yu-Jia; Wang, Chih-Chieh; Li, Kai-Shin; Lin, Chao-Cheng; Wang, Tahui |
| 國立交通大學 |
2020-01-02T00:04:18Z |
Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory
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Liu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Investigation of Data Pattern Effects on Nitride Charge Lateral Migration in a Charge Trap Flash Memory by Using a Random Telegraph Signal Method
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Liu, Y. H.; Lin, H. Y.; Jiang, C. M.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash Memory
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Lin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
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Su, P. C.; Jiang, C. M.; Wang, C. W.; Wang, Tahui |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
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Ku, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:37Z |
Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory
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Lu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:59:54Z |
Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory
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Su, Po-Cheng; Jiang, Cheng-Min; Wang, Chih-Wei; Wang, Tahui |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:39Z |
A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
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Tang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-Yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2018-08-21T05:56:39Z |
Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
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Tsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
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Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory
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Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:43Z |
負電容場效電晶體之操作速度及可靠度探討
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杜欣憶; 汪大暉; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:38Z |
電阻式記憶體循環操作後導致讀取干擾錯誤時間劣化之研究
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許峻齊; 汪大暉; Hsu , Chun-Chi; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
以氧化鎢電阻式記憶體探討影響寫入干擾錯誤時間變因之研究
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鍾季翰; 汪大暉; Chung, Chi-Han; Wang, TaHui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之特性量測
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陳威郡; 汪大暉; Chen, Wei-Chun; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之數值模擬
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楊宇翔; 汪大暉; 陳旻政; Yang, Yu-Siang; Wang, Tahui; Chen, Min-Cheng |
| 國立交通大學 |
2018-01-24T07:37:13Z |
三維NAND快閃記憶體隨機電報雜訊之特性探討
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周佑亮; 汪大暉; Chou, You-Liang; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:36:25Z |
電阻式記憶體及SONOS快閃式記憶體中介電層缺陷造成之可靠度效應研究
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鍾岳庭; 汪大暉; Chung, Yueh-Ting; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:32Z |
SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory
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Chung, Yueh-Ting; Su, Po-Cheng; Lin, Wen-Jie; Chen, Min-Cheng; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:07Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
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Chou, Y. L.; Wang, Tahui; Lin, Mercator; Chang, Y. W.; Liu, Lenvis; Huang, S. W.; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan |
Showing items 1-25 of 122 (5 Page(s) Totally)
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