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"wang tahui"的相关文件
显示项目 11-35 / 122 (共5页)
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| 國立交通大學 |
2018-08-21T05:56:39Z |
A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
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Tang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-Yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2018-08-21T05:56:39Z |
Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
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Tsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
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Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory
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Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:43Z |
負電容場效電晶體之操作速度及可靠度探討
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杜欣憶; 汪大暉; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:38Z |
電阻式記憶體循環操作後導致讀取干擾錯誤時間劣化之研究
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許峻齊; 汪大暉; Hsu , Chun-Chi; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
以氧化鎢電阻式記憶體探討影響寫入干擾錯誤時間變因之研究
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鍾季翰; 汪大暉; Chung, Chi-Han; Wang, TaHui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之特性量測
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陳威郡; 汪大暉; Chen, Wei-Chun; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之數值模擬
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楊宇翔; 汪大暉; 陳旻政; Yang, Yu-Siang; Wang, Tahui; Chen, Min-Cheng |
| 國立交通大學 |
2018-01-24T07:37:13Z |
三維NAND快閃記憶體隨機電報雜訊之特性探討
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周佑亮; 汪大暉; Chou, You-Liang; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:36:25Z |
電阻式記憶體及SONOS快閃式記憶體中介電層缺陷造成之可靠度效應研究
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鍾岳庭; 汪大暉; Chung, Yueh-Ting; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:32Z |
SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory
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Chung, Yueh-Ting; Su, Po-Cheng; Lin, Wen-Jie; Chen, Min-Cheng; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:07Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
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Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
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Chou, Y. L.; Wang, Tahui; Lin, Mercator; Chang, Y. W.; Liu, Lenvis; Huang, S. W.; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:50:09Z |
Silicide Barrier Engineering Induced Random Telegraph Noise in 1Xnm CMOS Contacts
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Chen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Huang, Chien-Chao; Ho, ChiaHua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Estimating the Detection Stability of a Si Nanowire Sensor Using an Additional Charging Electrode
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Chen, Min-Cheng; Chen, Hsiao-Chien; Lee, Ta-Hsien; Lin, Yu-Hsien; Shih, Jyun-Hung; Wang, Bo-Wei; Hou, Yun-Fang; Chen, Yi-Ju; Lin, Chia-Yi; Lin, Chang-Hsien; Hsieh, Yi-Ping; Ho, ChiaHua; Hua, Mu-Yi; Qiu, Jian-Tai; Wang, Tahui; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:43Z |
Investigation of the strained PMOS on (110) substrate
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Tang, Chun-Jung; Huang, Shih-Hian; Wang, Tahui; Chang, Chih-Sheng |
| 國立交通大學 |
2017-04-21T06:49:40Z |
Cell Endurance Prediction from a Large-area SONOS Capacitor
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Lee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Overall Operation Considerations for a SONOS-based Memory
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Lee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:14Z |
Hybrid Si/TMD 2D Electronic Double Channels Fabricated Using Solid CVD Few-Layer-MoS2 Stacking for V-th Matching and CMOS-Compatible 3DFETs
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Chen, Min-Cheng; Lin, Chia-Yi; Li, Kai-Hsin; Li, Lain-Jong; Chen, Chang-Hsiao; Chuang, Cheng-Hao; Lee, Ming-Dao; Chen, Yi-Ju; Hou, Yun-Fang; Lin, Chang-Hsien; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Yeh, Wen-Kuan; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
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Tang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory
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Su, P. C.; Chung, Y. T.; Chen, M. C.; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:48:24Z |
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
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Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:18Z |
TMD FinFET with 4 nm Thin Body and Back Gate Control for Future Low Power Technology
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Chen, Min-Cheng; Li, Kai-Shin; Li, Lain-Jong; Lu, Ang-Yu; Li, Ming-Yang; Chang, Yung-Huang; Lin, Chang-Hsien; Chen, Yi-Ju; Hou, Yun-Fang; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Shieh, Jia-Min; Yeh, Wen-Kuan; Shih, Jyun-Hong; Su, Po-Cheng; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
显示项目 11-35 / 122 (共5页)
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