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"wang tahui"的相關文件
顯示項目 96-122 / 122 (共3頁)
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| 國立交通大學 |
2014-12-12T01:37:16Z |
SONOS快閃記憶體中寫入電荷和元件結構對於隨機電報雜訊的影響
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林東陽; Lin, Steven; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-12T01:32:36Z |
高電壓橫向擴散金氧半電晶體中暫態熱載子效應與元件模型之探討
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鄭志昌; Cheng, Chih-Chang; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-12T01:26:58Z |
氮化矽快閃記憶體的暫態行為及其應用
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杜文仙; Tu, Wen-Hsien; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-12T01:25:20Z |
對於利用氮化矽局部電荷儲存之快閃記憶元件可靠度問題的探討
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蔡文哲; Tsai, Wen-Jer; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-12T01:23:20Z |
快閃式記憶體和金氧半電晶體元件中單一電荷所導致的可靠性議題研究
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馬煥淇; Ma, Huan-Chi; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
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Chou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:36:52Z |
Investigation of Random Telegraph Noise Amplitudes in Hafnium Oxide Resistive Memory Devices
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Chung, Y. T.; Liu, Y. H.; Su, P. C.; Cheng, Y. H.; Wang, Tahui; Chen, M. C. |
| 國立交通大學 |
2014-12-08T15:30:24Z |
Statistical Characterization and Modeling of the Temporal Evolutions of Delta V-t Distribution in NBTI Recovery in Nanometer MOSFETs
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Chiu, Jung-Piao; Liu, Yu-Heng; Hsieh, Hung-Da; Li, Chi-Wei; Chen, Min-Cheng; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:24:48Z |
Investigation of hot carrier degradation modes in LDMOS by using a novel three-region charge pumping technique
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Cheng, C. C.; Tu, K. C.; Wang, Tahui; Hsieh, T. H.; Tzeng, J. T.; Jong, Y. C.; Liou, R. S.; Pan, Sam C.; Hsu, S. L. |
| 國立交通大學 |
2014-12-08T15:24:18Z |
Characterization and modeling of trap number and creation time distributions under negative-bias-temperature stress
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Chiu, Jung-Piao; Li, Chi-Wei; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:22:46Z |
Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density
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Chen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Ho, Chia-Hua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:22:37Z |
V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation Effect
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Chung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:21:24Z |
A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETs
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Chiu, J. P.; Chung, Y. T.; Wang, Tahui; Chen, Min-Cheng; Lu, C. Y.; Yu, K. F. |
| 國立交通大學 |
2014-12-08T15:21:22Z |
Investigation of Post-NBT Stress Current Instability Modes in HfSiON Gate Dielectric pMOSFETs by Measurement of Individual Trapped Charge Emissions
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Ma, H. C.; Chiu, J. P.; Tang, C. J.; Wang, Tahui; Chang, C. S. |
| 國立交通大學 |
2014-12-08T15:21:21Z |
Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
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Chiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:16:28Z |
Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs
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Chan, Chien-Tai; Tang, Chun-Jung; Wang, Tahui; Wang, Howard C. -H.; Tang, Denny D. |
| 國立交通大學 |
2014-12-08T15:15:50Z |
Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique
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Cheng, Chih-Chang; Lin, J. F.; Wang, Tahui; Hsieh, T. H.; Tzeng, J. T.; Jong, Y. C.; Liou, R. S.; Pan, Samuel C.; Hsu, S. L. |
| 國立交通大學 |
2014-12-08T15:15:37Z |
Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
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Gu, Shaw-Hung; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:14:59Z |
Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells
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Gu, Shaw-Hung; Hsu, Chih-Wei; Wang, Tahui; Lu, Wen-Pin; Ku, Yen-Hui Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:01Z |
Effects of width scaling and layout variation on dual damascene copper interconnect electromigration
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Lin, M. H.; Chang, K. P.; Su, K. C.; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:12:21Z |
Effects of length scaling on electromigration in dual-damascene copper interconnects
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Lin, M. H.; Lin, M. T.; Wang, Tahui |
| 國立交通大學 |
2014-12-08T15:12:03Z |
A Novel Random Telegraph Signal Method to Study Program/Erase Charge Lateral Spread and Retention Loss in a SONOS Flash Memory
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Ma, Huan-Chi; Chou, You-Liang; Chiu, Jung-Piao; Chung, Yueh-Ting; Lin, Tung-Yang; Wang, Tahui; Chao, Yuan-Peng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:11:50Z |
Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
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Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:10:06Z |
A Novel Hot-Electron Programming Method in a Buried Diffusion Bit-Line SONOS Memory by Utilizing Nonequilibrium Charge Transport
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Wang, Tahui; Tang, Chun-Jung; Li, C. -W.; Lee, Chih Hsiung; Ou, T. -F; Chang, Yao-Wen; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, K. -C.; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:09:25Z |
Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS
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Cheng, Chih-Chang; Lin, J. F.; Wang, Tahui; Hsieh, T. H.; Tzeng, J. T.; Jong, Y. C.; Liou, R. S.; Pan, Samuel C.; Hsu, S. L. |
| 國立交通大學 |
2014-12-08T15:08:33Z |
Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
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Tang, Chun-Jung; Wang, Tahui; Chang, Chih-Sheng |
| 國立交通大學 |
2014-12-08T15:08:23Z |
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
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Ma, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
顯示項目 96-122 / 122 (共3頁)
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