|
|
???tair.name??? >
???browser.page.title.author???
|
"wang tahui"???jsp.browse.items-by-author.description???
Showing items 1-50 of 122 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
| 國立交通大學 |
2020-10-05T02:01:09Z |
Design Space Analysis for Cross-Point 1S1MTJ MRAM: Selector-MTJ Cooptimization
|
Chiang, Hung-Li; Chen, Tzu-Chiang; Song, Ming-Yuan; Chen, Yu-Sheng; Chiu, Jung-Piao; Chiang, Katherine; Manfrini, Mauricio; Cai, Jin; Gallagher, William J.; Wang, Tahui; Diaz, Carlos H.; Wong, H. -S. Philip |
| 國立交通大學 |
2020-02-02T23:54:29Z |
Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching Device
|
Su, Po-Cheng; Jiang, Cheng-Min; Chen, Yu-Jia; Wang, Chih-Chieh; Li, Kai-Shin; Lin, Chao-Cheng; Wang, Tahui |
| 國立交通大學 |
2020-01-02T00:04:18Z |
Investigation of Electron and Hole Lateral Migration in Silicon Nitride and Data Pattern Effects on ${V}_{{t}}$ Retention Loss in a Multilevel Charge Trap Flash Memory
|
Liu, Yu-Heng; Zhan, Ting-Chien; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Investigation of Data Pattern Effects on Nitride Charge Lateral Migration in a Charge Trap Flash Memory by Using a Random Telegraph Signal Method
|
Liu, Y. H.; Lin, H. Y.; Jiang, C. M.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash Memory
|
Lin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-08-02T02:24:17Z |
Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
|
Su, P. C.; Jiang, C. M.; Wang, C. W.; Wang, Tahui |
| 國立交通大學 |
2019-04-02T06:04:53Z |
Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory
|
Ku, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T06:04:37Z |
Analysis and Realization of TLC or even QLC Operation with a High Performance Multi-times Verify Scheme in 3D NAND Flash memory
|
Lu, C. C.; Cheng, C. C.; Chiu, H. P.; Lin, W. L.; Chen, T. W.; Ku, S. H.; Tsai, Wen-Jer; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2019-04-02T05:59:54Z |
Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory
|
Su, Po-Cheng; Jiang, Cheng-Min; Wang, Chih-Wei; Wang, Tahui |
| 國立交通大學 |
2019-04-02T05:59:51Z |
Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
|
Chou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:56:39Z |
A Numerical Study of Si-TMD Contact with n/p Type Operation and Interface Barrier Reduction for Sub-5 nm Monolayer MoS2 FET
|
Tang, Ying-Tsan; Li, Kai-Shin; Li, Lain-Jong; Li, Ming-Yang; Lin, Chang-Hsien; Chen, Yi-Ju; Chen, Chun-Chi; Su, Chuan-Jung; Wu, Bo-Wei; Wu, Cheng-San; Chen, Min-Cheng; Shieh, Jia-Min; Yeh, Wen-Kuan; Su, Po-Cheng; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2018-08-21T05:56:39Z |
Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell String
|
Tsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:54:20Z |
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
|
Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2018-08-21T05:53:02Z |
Characterization and modeling of SET/RESET cycling induced read-disturb failure time degradation in a resistive switching memory
|
Su, Po-Cheng; Hsu, Chun-Chi; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:43Z |
負電容場效電晶體之操作速度及可靠度探討
|
杜欣憶; 汪大暉; Du, Sin-I; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:41:38Z |
電阻式記憶體循環操作後導致讀取干擾錯誤時間劣化之研究
|
許峻齊; 汪大暉; Hsu , Chun-Chi; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
以氧化鎢電阻式記憶體探討影響寫入干擾錯誤時間變因之研究
|
鍾季翰; 汪大暉; Chung, Chi-Han; Wang, TaHui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之特性量測
|
陳威郡; 汪大暉; Chen, Wei-Chun; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:38:02Z |
氮化矽快閃記憶體的橫向電場引致內部儲存電荷傳輸之數值模擬
|
楊宇翔; 汪大暉; 陳旻政; Yang, Yu-Siang; Wang, Tahui; Chen, Min-Cheng |
| 國立交通大學 |
2018-01-24T07:37:13Z |
三維NAND快閃記憶體隨機電報雜訊之特性探討
|
周佑亮; 汪大暉; Chou, You-Liang; Wang, Tahui |
| 國立交通大學 |
2018-01-24T07:36:25Z |
電阻式記憶體及SONOS快閃式記憶體中介電層缺陷造成之可靠度效應研究
|
鍾岳庭; 汪大暉; Chung, Yueh-Ting; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:32Z |
SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching Memory
|
Chung, Yueh-Ting; Su, Po-Cheng; Lin, Wen-Jie; Chen, Min-Cheng; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:56:17Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
|
Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:56:07Z |
Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
|
Liu, Yu-Heng; Jiang, Cheng-Min; Chen, Wei-Chun; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:55:39Z |
Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell String
|
Chou, Y. L.; Wang, Tahui; Lin, Mercator; Chang, Y. W.; Liu, Lenvis; Huang, S. W.; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:50:09Z |
Silicide Barrier Engineering Induced Random Telegraph Noise in 1Xnm CMOS Contacts
|
Chen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Huang, Chien-Chao; Ho, ChiaHua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:47Z |
Estimating the Detection Stability of a Si Nanowire Sensor Using an Additional Charging Electrode
|
Chen, Min-Cheng; Chen, Hsiao-Chien; Lee, Ta-Hsien; Lin, Yu-Hsien; Shih, Jyun-Hung; Wang, Bo-Wei; Hou, Yun-Fang; Chen, Yi-Ju; Lin, Chia-Yi; Lin, Chang-Hsien; Hsieh, Yi-Ping; Ho, ChiaHua; Hua, Mu-Yi; Qiu, Jian-Tai; Wang, Tahui; Yang, Fu-Liang |
| 國立交通大學 |
2017-04-21T06:49:43Z |
Investigation of the strained PMOS on (110) substrate
|
Tang, Chun-Jung; Huang, Shih-Hian; Wang, Tahui; Chang, Chih-Sheng |
| 國立交通大學 |
2017-04-21T06:49:40Z |
Cell Endurance Prediction from a Large-area SONOS Capacitor
|
Lee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Overall Operation Considerations for a SONOS-based Memory
|
Lee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y. |
| 國立交通大學 |
2017-04-21T06:49:14Z |
Hybrid Si/TMD 2D Electronic Double Channels Fabricated Using Solid CVD Few-Layer-MoS2 Stacking for V-th Matching and CMOS-Compatible 3DFETs
|
Chen, Min-Cheng; Lin, Chia-Yi; Li, Kai-Hsin; Li, Lain-Jong; Chen, Chang-Hsiao; Chuang, Cheng-Hao; Lee, Ming-Dao; Chen, Yi-Ju; Hou, Yun-Fang; Lin, Chang-Hsien; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Yeh, Wen-Kuan; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2017-04-21T06:49:10Z |
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
|
Tang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:58Z |
Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory
|
Su, P. C.; Chung, Y. T.; Chen, M. C.; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:48:24Z |
Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory
|
Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:18Z |
TMD FinFET with 4 nm Thin Body and Back Gate Control for Future Low Power Technology
|
Chen, Min-Cheng; Li, Kai-Shin; Li, Lain-Jong; Lu, Ang-Yu; Li, Ming-Yang; Chang, Yung-Huang; Lin, Chang-Hsien; Chen, Yi-Ju; Hou, Yun-Fang; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Shieh, Jia-Min; Yeh, Wen-Kuan; Shih, Jyun-Hong; Su, Po-Cheng; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立交通大學 |
2017-04-21T06:48:16Z |
Investigation of charge loss in cycled NBit cells via field and temperature accelerations
|
Tsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Tahui; Ku, Joseph; Lu, Chih-Yuan |
| 國立交通大學 |
2017-04-21T06:48:16Z |
Effects of width scaling, length scaling, and layout variation on electromigrationin in dual damascene copper interconnects
|
Lin, M. H.; Chang, K. P.; Su, K. C.; Wang, Tahui |
| 國立交通大學 |
2017-04-21T06:48:15Z |
Insight of stress effect on the ONO stack layer in a SONOS-type flash memory cell
|
Yeh, C. C.; Liao, Y. Y.; Wang, Tahui; Tsai, W. J.; Lu, T. C.; Kao, H. L.; Ou, T. F.; Chen, M. S.; Chen, Y. K.; Lai, E. K.; Shih, Y. H.; Ting, WenChi; Ku, Y. H. Joseph; Lit, Chih-Yuan |
| 國立交通大學 |
2016-03-29T00:01:16Z |
電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2016-03-28T08:17:26Z |
單電荷與輻射效應在先進CMOS 和SONOS 元件可靠性之統計量測與模式
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2016-03-28T08:17:17Z |
電阻式記憶體陣列內新式可靠性效應與物理機制、統計分析量測及三度空間可靠性模擬
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2015-11-26T01:06:49Z |
氧化鉿電阻式記憶體之操作方法與隨機電報雜訊研究
|
王柏偉; Wang, Bo-Wei; 汪大暉; 陳旻政; Wang, Tahui; Chen, Min-Cheng |
| 國立交通大學 |
2015-11-26T01:02:27Z |
雙介電層低功耗電阻式記憶體之設計與最佳化
|
楊勝博; Yang, Shang-Po; 莊紹勳; 汪大暉; Chung, Shao-Shiun; Wang, Tahui |
| 國立交通大學 |
2015-11-26T01:02:22Z |
電阻式記憶體操作後導致缺陷產生與寫入干擾錯誤時間劣化之研究
|
林汶潔; Lin, Wen-Chieh; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2015-11-26T01:02:22Z |
不同介電質的平面式及閘極環繞式氮化矽快閃記憶體之寫入/抹除/保存模擬
|
蔡德宏; Tsai, Te-Hung; 汪大暉; Wang, Tahui |
| 國立交通大學 |
2015-07-21T08:28:33Z |
Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory
|
Chung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-13T10:51:20Z |
次32奈米CMOS元件可靠性分析、量子結構效應、與蒙地卡羅電荷傳輸模擬
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2014-12-13T10:50:25Z |
次50奈米二位元儲存氮化矽快閃式記憶體元件之結構、電荷傳輸與可靠性研究
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2014-12-13T10:47:45Z |
薄氧化層中漏電流與Soft Breakdown特性與機制研究
|
汪大暉; WANG TAHUI |
| 國立交通大學 |
2014-12-13T10:46:43Z |
次32奈米CMOS元件可靠性分析、量子結構效應、與蒙地卡羅電荷傳輸模擬
|
汪大暉; WANG TAHUI |
Showing items 1-50 of 122 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
|
