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Showing items 1-15 of 15 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:49:01Z |
Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions
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Wang, Te-Chung; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Gao, Run-Ci; Tsay, Jenq-Dar; Wang, Sing-Chung |
| 國立交通大學 |
2014-12-08T15:44:05Z |
Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
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Ling, Shih-Chun; Wang, Te-Chung; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:40:41Z |
Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
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Ling, Shih-Chun; Wang, Te-Chung; Chen, Jun-Rong; Liu, Po-Chun; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Tsay, Jenq-Dar |
| 國立交通大學 |
2014-12-08T15:16:52Z |
Characteristics of ultraviolet nonpolar InGaN/GaN light-emitting diodes using trench epitaxial lateral overgrowth technology
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Ling, Shih-Chun; Wang, Te-Chung; Ko, Tsung-Shine; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:16:47Z |
Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes
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Chang, Yi-An; Yen, Sheng-Horng; Wang, Te-Chung; Kuo, Hao-Chung; Kuo, Yen-Kuang; Lu, Tien-Chang; Wang, Shing-Chung |
| 國立交通大學 |
2014-12-08T15:15:12Z |
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
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Wang, Te-Chung; Lu, Tien-Chang; Ko, Tsung-Shine; Kuo, Hao-Chung; Yu, Min; Wang, Sing-Chung; Chuo, Chang-Cheng; Lee, Zheng-Hong; Chen, Hou-Guang |
| 國立交通大學 |
2014-12-08T15:13:47Z |
Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter
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Lai, Chun-Feng; Yu, Peichen; Wang, Te-Chung; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Lee, Chao-Kuei |
| 國立交通大學 |
2014-12-08T15:13:39Z |
Lasing characteristics of a GaN photonic crystal nanocavity light source
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Lai, Chun-Feng; Yu, Peichen; Wang, Te-Chung; Kuo, Hao-Chung; Lu, Tien-Chang; Wang, Shing-Chung; Lee, Chao-Kuei |
| 國立交通大學 |
2014-12-08T15:10:57Z |
Material and optical properties of trenched epitaxial lateral overgrowth of a-plane GaN
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Wang, Te-Chung; Lu, Tien-Chang; Ko, Tsung-Shine; Kuo, Hao-Chung; Chen, Hou-Guang; Yu, Min; Chu, Chang-Cheng; Lee, Zheng-Hong; Wang, Sing-Chung |
| 國立交通大學 |
2014-12-08T15:08:57Z |
Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
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Ling, Shih-Chun; Wang, Te-Chung; Chen, Jun-Rong; Liu, Po-Chun; Ko, Tsung-Shine; Chang, Bao-Yao; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; Tsay, Jenq-Dar |
| 國立彰化師範大學 |
2006-03 |
Experimental and Theoretical Analysis on Ultraviolet 370 nm AlGaInN Light-emitting Diodes
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Chang, Yi-An; Yen, Sheng-Horng; Wang, Te-Chung; Kuo, Hao-Chung; Kuo, Yen-Kuang; Lu, Tien-Chang; Wang, Shing-Chung |
| 國立彰化師範大學 |
2006 |
Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-emitting Diodes
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Chang, Yi-An; Yen, Sheng-Horng; Ko, Tsung-Hsine; Wang, Te-Chung; Lu, Chun-Yi; Kuo, Hao-Chung; Kuo, Yen-Kuang; Lu, Tien-Chang; Wang, Shing-Chung |
| 國立成功大學 |
2003-08 |
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
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Tu, Ru-Chin; Tun, Chun-Ju; Pan, Chun-Ju; Liu, Hai-Ping; Tsai, Ching-En; Sheu, J. K.; Chuo, Chang-Cheng; Wang, Te-Chung; Chi, Gou-Chung; Chen, In-Gann |
| 國立成功大學 |
2003 |
Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature
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Tu, Ru-Chin; Pan, Shyi-Ming; Chuo, Chang-Cheng; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Tsai, Ching-En; Wang, Te-Chung; Chi. Gou-Chung |
| 國立成功大學 |
2003 |
Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
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Tu, Ru-Chin; Tun, Chun-Ju; �Sheu, �Jinn-Kong; Kuo, Wei-Hong; Wang, Te-Chung; Tsai, Ching-En; Hsu, Jung-Tsung; Chi, Jim; Chi, Gou-Chung |
Showing items 1-15 of 15 (1 Page(s) Totally)
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